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ADG774ABRQZ-REEL

P1-P3P4-P6P7-P9P10-P12P13-P15
Data Sheet ADG774A
Rev. C | Page 3 of 14
SPECIFICATIONS
SINGLE SUPPLY
V
DD
= 5 V ± 10%, GND = 0 V, all specifications T
MIN
to T
MAX
, unless otherwise noted.
1
Table 1.
B Version
Parameter 25°C T
MIN
to T
MAX
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to 2.5 V
On Resistance, R
ON
2.2 Ω typ V
D
= 0 V to 1 V, I
S
= −10 mA
3.5 4 Ω max
On Resistance Match Between Channels, ∆R
ON
0.15 Ω typ V
D
= 0 V to 1 V, I
S
= −10 mA
0.5 Ω max
On Resistance Flatness, R
FLAT(ON)
0.3 Ω typ V
D
= 0 V to 1 V, I
S
= −10 mA
0.6 Ω max
LEAKAGE CURRENTS
Source Off Leakage, I
S
(OFF) ±0.001 nA typ V
D
= 3 V/1 V, V
S
= 1 V/3 V, see Figure 17
±0.1 ±0.25 nA max
Drain Off Leakage, I
D
(OFF) ±0.001 nA typ V
D
= 3 V/1 V, V
S
= 1 V/3 V, see Figure 17
±0.1 ±0.25 nA max
Channel On Leakage, I
D
, I
S
(ON) ±0.001 nA typ V
D
= V
S
= 3 V/1 V, see Figure 18
±0.1 ±0.25 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.001 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
Digital Input Capacitance, C
IN
3 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
, t
ON
(EN)
6 ns typ C
L
= 35 pF, R
L
= 50 Ω, V
S
= 2 V, see Figure 22
12 ns max
t
OFF
, t
OFF
(EN)
3 ns typ C
L
= 35 pF, R
L
= 50 Ω, V
S
= 2 V, see Figure 22
6 ns max
Break-Before-Make Time Delay, t
D
3 ns typ C
L
= 35 pF, R
L
= 50 Ω, V
S1
= V
S2
= 2 V, see Figure 23
1 ns min
Off Isolation −65 dB typ f = 10 MHz, R
L
= 50 Ω, see Figure 20
Channel-to-Channel Crosstalk −70 dB typ f = 10 MHz, R
L
= 50 Ω, see Figure 21
Bandwidth −3 dB 400 MHz typ R
L
= 50 Ω, see Figure 19
Distortion 0.3 % typ R
L
= 100 Ω
Charge Injection 6 pC typ C
L
= 1 nF, see Figure 24, V
S
= 0 V
C
S
(OFF) 5 pF typ
C
D
(OFF) 7.5 pF typ
C
D
, C
S
(ON) 12 pF typ
POWER REQUIREMENTS V
DD
= 5.5 V
Digital inputs = 0 V or V
DD
I
DD
1 μA max
0.001 μA typ
1
Temperature range for B version is −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
ADG774A Data Sheet
Rev. C | Page 4 of 14
V
DD
= 3 V ± 10%, GND = 0 V, all specifications T
MIN
to T
MAX
, unless otherwise noted.
1
Table 2.
B Version
Parameter 25°C T
MIN
to T
MAX
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to 1.5 V
On Resistance, R
ON
4 Ω typ V
D
= 0 V to 1 V; I
S
= −10 mA
6 7 Ω max
On Resistance Match Between Channels, ∆R
ON
0.15 Ω typ V
D
= 0 V to 1 V, I
S
= −10 mA
0.5 Ω max
On Resistance Flatness, R
FLAT(ON)
1.5 Ω typ V
D
= 0 V to 1 V, I
S
= −10 mA
3 Ω max
LEAKAGE CURRENTS
Source Off Leakage, I
S
(OFF) ±0.001 nA typ V
D
= 2 V/1 V, V
S
= 1 V/2 V, see Figure 17
±0.1 ±0.25 nA max
Drain Off Leakage, I
D
(OFF) ±0.001 nA typ V
D
= 2 V/1 V, V
S
= 1 V/2 V, see Figure 17
±0.1 ±0.25 nA max
Channel On Leakage, I
D
, I
S
(ON) ±0.001 nA typ V
D
= V
S
= 2 V/1 V, see Figure 18
±0.1 ±0.25 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.4 V max
Input Current
I
INL
or I
INH
0.001 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
Digital Input Capacitance, C
IN
3 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
, t
ON
(EN)
7 ns typ C
L
= 35 pF, R
L
= 50 Ω, V
S
= 1.5 V, see Figure 22
14 ns max
t
OFF
, t
OFF
(EN)
4 ns typ C
L
= 35 pF, R
L
= 50 Ω, V
S
= 1.5 V, see Figure 22
8 ns max
Break-Before-Make Time Delay, t
D
3 ns typ C
L
= 35 pF, R
L
= 50 Ω, V
S1
= V
S2
= 1.5 V, see Figure 23
1 ns min
Off Isolation −65 dB typ f = 10 MHz, R
L
= 50 Ω
Channel-to-Channel Crosstalk −70 dB typ f = 10 MHz, R
L
= 50 Ω, see Figure 21
Bandwidth −3 dB 400 MHz typ R
L
= 50 Ω, see Figure 19
Distortion 1.5 % typ R
L
= 100 Ω
Charge Injection 4 pC typ C
L
= 1 nF, see Figure 24, V
S
= 0 V
C
S
(OFF) 5 pF typ
C
D
(OFF) 7.5 pF typ
C
D
, C
S
(ON) 12 pF typ
POWER REQUIREMENTS V
DD
= 3.3 V
Digital inputs = 0 V or V
DD
I
DD
1 μA max
0.001 μA typ
1
Temperature range for B version is −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Data Sheet ADG774A
Rev. C | Page 5 of 14
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameters Rating
V
DD
to GND −0.3 V to +6 V
Analog, Digital Inputs
1
−0.3 V to V
DD
+ 0.3 V or 30 mA,
whichever occurs first
Continuous Current, S or D 100 mA
Peak Current, S or D
300 mA (pulsed at 1 ms,
10% duty cycle max)
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
Thermal Impedance, θ
JA
16-Lead QSSOP 105.44°C/W
2
16-Lead LFCSP (3 mm × 3 mm) 48.7°C/W
2
Lead Temperature Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
Reflow Soldering (Pb-free)
Peak Temperature 260°C (+0°C/–5°C)
Time at Peak Temperature 10 sec to 40 sec
1
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
2
Measured with the device soldered on a four-layer board.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
P1-P3P4-P6P7-P9P10-P12P13-P15

ADG774ABRQZ-REEL

Mfr. #:
Buy ADG774ABRQZ-REEL
Manufacturer:
Analog Devices Inc.
Description:
Multiplexer Switch ICs 2:1 400MHz 2.2 Ohm Quad CMOS
Lifecycle:
New from this manufacturer.
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