NTMSD3P102R2SG Datasheet NTMSD3P102R2, NTMSD3P102R2G, NTMSD3P102R2SG | P1-P3

© Semiconductor Components Industries, LLC, 2007

July, 2007 - Rev. 3

1 Publication Order Number:

NTMSD3P102R2/D

NTMSD3P102R2

FETKY™

P-Channel Enhancement-Mode

Power MOSFET and Schottky Diode

Dual SO-8 Package

Features

•High Efficiency Components in a Single SO-8 Package

•High Density Power MOSFET with Low R

DS(on)

,

Schottky Diode with Low V

F

•Independent Pin-Outs for MOSFET and Schottky Die

Allowing for Flexibility in Application Use

•Less Component Placement for Board Space Savings

•SO-8 Surface Mount Package,

Mounting Information for SO-8 Package Provided

•Pb-Free Packages are Available

Applications

•DC-DC Converters

•Low Voltage Motor Control

•Power Management in Portable and Battery-Powered Products,

i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones

MOSFET MAXIMUM RATINGS

(T

J

= 25°C unless otherwise noted).

Rating

Symbol Value Unit

Drain-to-Source Voltage V

DSS

-20 V

Gate-to-Source Voltage - Continuous V

GS

"20 V

Thermal Resistance -

Junction-to-Ambient (Note 1)

Total Power Dissipation @ T

A

= 25°C

Continuous Drain Current @ T

A

= 25°C

Continuous Drain Current @ T

A

= 70°C

Pulsed Drain Current (Note 4)

R

q

JA

P

D

I

D

I

D

I

DM

171

0.73

-2.34

-1.87

-8.0

°C/W

W

A

Thermal Resistance -

Junction-to-Ambient (Note 2)

Total Power Dissipation @ T

A

= 25°C

Continuous Drain Current @ T

A

= 25°C

Continuous Drain Current @ T

A

= 70°C

Pulsed Drain Current (Note 4)

R

q

JA

P

D

I

D

I

D

I

DM

100

1.25

-3.05

-2.44

-12

°C/W

W

A

Thermal Resistance -

Junction-to-Ambient (Note 3)

Total Power Dissipation @ T

A

= 25°C

Continuous Drain Current @ T

A

= 25°C

Continuous Drain Current @ T

A

= 70°C

Pulsed Drain Current (Note 4)

R

q

JA

P

D

I

D

I

D

I

DM

62.5

2.0

-3.86

-3.10

-15

°C/W

W

A

Operating and Storage Temperature Range T

J

, T

stg

-55 to

+150

°C

Single Pulse Drain-to-Source Avalanche

Energy - Starting T

J

= 25°C

(V

DD

= -20 Vdc, V

GS

= -4.5 Vdc,

Peak I

L

= -7.5 Apk, L = 5 mH, R

G

= 25 W)

E

AS

140 mJ

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

T

L

260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Minimum FR-4 or G-10 PCB, Steady State.

2. Mounted onto a 2″ square FR-4 Board (1 in sq, 2 oz Cu 0.06″ thick

single-sided), Steady State.

3. Mounted onto a 2″ square FR-4 Board (1 in sq, 2 oz Cu 0.06″ thick single

sided), t ≤ 10 seconds.

4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.

Device Package Shipping

†

ORDERING INFORMATION

NTMSD3P102R2 SO-8 2500/Tape & Reel

MOSFET

-3.05 AMPERES

-20 VOLTS

0.085 W @ V

GS

= -10 V

SCHOTTKY DIODE

1.0 AMPERE

20 VOLTS

470 mV @ I

F

= 1.0 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SO-8

CASE 751

STYLE 18

MARKING DIAGRAM &

PIN ASSIGNMENT

E3P1 = Device Code

xx = 02 or S

A = Assembly Location

Y = Year

WW = Work Week

G = Pb-Free Package

1

8

AA SG

CC DD

(Note: Microdot may be in either location)

1

8

E3P1xx

AYWWG

G

NTMSD3P102R2G SO-8

(Pb-Free)

2500/Tape & Reel

NTMSD3P102R2SG SO-8

(Pb-Free)

2500/Tape & Reel

http://onsemi.com

A

S

G

C

D

(TOP VIEW)

1

2

3

4

8

7

6

5

NTMSD3P102R2

http://onsemi.com

2

SCHOTTKY MAXIMUM RATINGS (T

J

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Peak Repetitive Reverse Voltage

DC Blocking Voltage

V

RRM

V

R

20 V

Thermal Resistance - Junction-to-Ambient (Note 5)

R

q

JA

204 °C/W

Thermal Resistance - Junction-to-Ambient (Note 6)

R

q

JA

122 °C/W

Thermal Resistance - Junction-to-Ambient (Note 7)

R

q

JA

83 °C/W

Average Forward Current (Note 7)

(Rated V

R

, T

A

= 100°C)

I

O

1.0 A

Peak Repetitive Forward Current (Note 7)

(Rated V

R

, Square Wave, 20 kHz, T

A

= 105°C)

I

FRM

2.0 A

Non-Repetitive Peak Surge Current (Note 7)

(Surge Applied at Rated Load Conditions, Half-Wave, Single Phase, 60 Hz)

I

FSM

20 A

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

5. Minimum FR-4 or G-10 PCB, Steady State.

6. Mounted onto a 2″ square FR-4 Board (1 in sq, 2 oz Cu 0.06″ thick single-sided), Steady State.

7. Mounted onto a 2″ square FR-4 Board (1 in sq, 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds.

SCHOTTKY ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted) (Note 8)

Characteristic

Symbol Value Unit

Maximum Instantaneous Forward Voltage

I

F

= 1.0 Adc

I

F

= 2.0 Adc

V

F

T

J

= 25°C T

J

= 125°C

Volts

Maximum Instantaneous Forward Voltage

I

F

= 1.0 Adc

I

F

= 2.0 Adc

V

F

0.47

0.58

0.39

0.53

Volts

Maximum Instantaneous Reverse Current

V

R

= 20 Vdc

I

R

T

J

= 25°C T

J

= 125°C

mA

0.05 10

Maximum Voltage Rate of Change V

R

= 20 Vdc dV/dt 10,000

V/ms

8. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.

NTMSD3P102R2

http://onsemi.com

3

MOSFET ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted) (Note 9)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

(V

GS

= 0 Vdc, I

D

= -250 mAdc)

Temperature Coefficient (Positive)

V

(BR)DSS

-20

-

-30

-

Vdc

mV/°C

Zero Gate Voltage Drain Current

(V

DS

= -20 Vdc, V

GS

= 0 Vdc, T

J

= 25°C)

(V

DS

= -20 Vdc, V

GS

= 0 Vdc, T

J

= 125°C)

I

DSS

-

-1.0

-25

mAdc

Gate-Body Leakage Current

(V

GS

= -20 Vdc, V

DS

= 0 Vdc)

I

GSS

- - -100

nAdc

Gate-Body Leakage Current

(V

GS

= +20 Vdc, V

DS

= 0 Vdc)

I

GSS

- - 100

nAdc

ON CHARACTERISTICS

Gate Threshold Voltage

(V

DS

= V

GS

, I

D

= -250 mAdc)

Temperature Coefficient (Negative)

V

GS(th)

-1.0

-

-1.7

3.6

-2.5

-

Vdc

Static Drain-to-Source On-State Resistance

(V

GS

= -10 Vdc, I

D

= -3.05 Adc)

(V

GS

= -4.5 Vdc, I

D

= -1.5 Adc)

R

DS(on)

-

0.063

0.090

0.085

0.125

W

Forward Transconductance

(V

DS

= -15 Vdc, I

D

= -3.05 Adc)

g

FS

- 5.0 -

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

DS

= -16 Vdc, V

GS

= 0 Vdc,

f = 1.0 MHz)

C

iss

- 518 750 pF

Output Capacitance C

oss

- 190 350

Reverse Transfer Capacitance C

rss

- 70 135

SWITCHING CHARACTERISTICS (Notes 10 & 11)

Turn-On Delay Time

(V

DD

= -20 Vdc, I

D

= -3.05 Adc,

V

GS

= -10 Vdc,

R

G

= 6.0 W)

t

d(on)

- 12 22

ns

Rise Time t

r

- 16 30

Turn-Off Delay Time t

d(off)

- 45 80

Fall Time t

f

- 45 80

Turn-On Delay Time

(V

DD

= -20 Vdc, I

D

= -1.5 Adc,

V

GS

= -4.5 Vdc,

R

G

= 6.0 W)

t

d(on)

- 16 -

ns

Rise Time t

r

- 42 -

Turn-Off Delay Time t

d(off)

- 32 -

Fall Time t

f

- 35 -

Total Gate Charge

(V

DS

= -20 Vdc,

V

GS

= -10 Vdc,

I

D

= -3.05 Adc)

Q

tot

- 16 25

nC

Gate-Source Charge Q

gs

- 2.0 -

Gate-Drain Charge Q

gd

- 4.5 -

BODY-DRAIN DIODE RATINGS (Note 10)

Diode Forward On-Voltage (I

S

= -3.05 Adc, V

GS

= 0 Vdc)

(I

S

= -3.05 Adc, V

GS

= 0 Vdc, T

J

= 125°C)

V

SD

-

-0.96

-0.78

-1.25

-

Vdc

Reverse Recovery Time

(I

S

= -3.05 Adc, V

GS

= 0 Vdc,

dI

S

/dt = 100 A/ms)

t

rr

- 34 -

ns

t

a

- 18 -

t

b

- 16 -

Reverse Recovery Stored Charge Q

RR

- 0.03 -

mC

9. Handling precautions to protect against electrostatic discharge are mandatory.

10.Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.

11. Switching characteristics are independent of operating junction temperature.

NTMSD3P102R2SG

NTMSD3P102R2SG

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