NTMSD3P102R2SG

NTMSD3P102R2
http://onsemi.com
4
TYPICAL MOSFET ELECTRICAL CHARACTERISTICS
1
0.6
1.2
1.6
0
5
2
2
0.50.25
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-I
D
, DRAIN CURRENT (AMPS)
0
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
-I
D
, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
Figure 5. On Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
14325
-50 50 75250 150-25
0.75
1
3
4
V
GS
= -8 V
V
GS
= -6 V
V
GS
= -4.8 V
V
GS
= -5 V
V
GS
= -4.4 V
V
GS
= -3.6 V
V
DS
> = -10 V
T
J
= 25°C
T
J
= -55°C
T
J
= 100°C
I
D
= -3.05 A
V
GS
= -10 V
6
V
GS
= -4.6 V
V
GS
= -10 V
1 1.25 1.5 1.75
5
2
0
1
3
4
6
1.4
0.8
V
GS
= -3.2 V
V
GS
= -3 V
V
GS
= -2.6 V
100 125
V
GS
= -4 V
T
J
= 25°C
V
GS
= -2.8 V
0.12
0.1
0.06
0.07
0.05
0.25
0.20
0.15
765
0.10
0.05
0.00
48
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
-I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
13254
V
GS
= -10 V
V
GS
= -4.5 V
6
0.30
0.35
I
D
= -3.0 A
T
J
= 25°C
T
J
= 25°C
123 910
0.11
0.08
0.09
7
NTMSD3P102R2
http://onsemi.com
5
24
12
0
20
16
8
4
2141810620
I
D
= -3.05 A
T
J
= 25°C
V
GS
Q
2
Q
1
Q
T
1000
100
10
12
6
0
1200
1000
800
600
400
200
0
3
2
0.5
0
1000
100
1
10000
1000
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
DSS
, LEAKAGE (nA)
100
10
GATE-TO-SOURCE OR DRAIN-TO-SOURCE
VOLTAGE (VOLTS)
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
Figure 7. Capacitance Variation
C, CAPACITANCE (pF)
Figure 8. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
Q
g
, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
t, TIME (ns)
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
Figure 11. Diode Forward Voltage vs. Current
-V
SD
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
t, TIME (ns)
I
S
, SOURCE CURRENT (AMPS)
0 8 16 1 100
1 10010 0.2 1 1.20.80.60.4
V
GS
= 0 V
V
DS
= 0 V
T
J
= 125°C
C
rss
C
iss
C
oss
C
rss
10
10
C
iss
V
DS
= -20 V
I
D
= -3.05 A
V
GS
= -10 V
t
r
t
d(off)
t
d(on)
t
f
1
1.5
2.5
10
8
4
2
246 101214
T
J
= 150°C
V
GS
= 0 V
T
J
= 25°C
V
DS
= -20 V
I
D
= -1.5 A
V
GS
= -4.5 V
t
r
t
d(off)
t
d(on)
t
f
V
GS
= 0 V
T
J
= 25°C
10 10 1555200
V
DS
4 8 12 16
-V
GS
-V
DS
NTMSD3P102R2
http://onsemi.com
6
R
thja(t)
, EFFECTIVE TRANSIENT
THERMAL RESPONSE
di/dt
t
rr
t
a
t
p
I
S
0.25 I
S
TIME
I
S
t
b
Figure 12. Diode Reverse Recovery Waveform
Figure 13. FET Thermal Response
1.0
0.1
0.01
1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.0014 F 0.0073 F 0.022 F 0.105 F 0.484 F
Ambient
Chip
Junction
2.32 W 18.5 W 50.9 W 37.1 W 56.8 W
Normalized to R
q
JA
at Steady State (1 pad)
3.68 F
24.4 W
t, TIME (s)
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
T
J
= 125°C
0.7 1.00.1
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
V
F
, MAXIMUM INSTANTANEOUS
FORWARD VOLTAGE (VOLTS)
1.40
1.0
0.1
0.1
0.40.2 0.3 0.5 0.6 0.8 0.9 0.2 0.4 0.6 0.8
10
1.0 1.2
85°C 25°C
-40°
C
T
J
= 125°C
25°C
85°C
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
Figure 14. Typical Forward Voltage Figure 15. Maximum Forward Voltage

NTMSD3P102R2SG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors MOSFET FETKY 20V .085R TR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet