NTMSD3P102R2SG

NTMSD3P102R2
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7
Figure 16. Typical Reverse Current Figure 17. Maximum Reverse Current
Figure 18. Typical Capacitance Figure 19. Current Derating
15 200
V
R
, REVERSE VOLTAGE (VOLTS)
1E-2
1E-4
1E-3
1E-5
15 200
V
R
, REVERSE VOLTAGE (VOLTS)
1000
100
10
T
A
, AMBIENT TEMPERATURE (°C)
200
1.6
0.8
0.6
0.4
0.2
0
40
I
R
, REVERSE CURRENT (AMPS)
1E-6
1E-7
5.0 10
5.0 10 60 80 100 120 140 160
C, CAPACITANCE (pF)
I , AVERAGE FORWARD CURRENT (AMPS)
O
15 200
V
R
, REVERSE VOLTAGE (VOLTS)
1E-1
1E-3
1E-2
1E-4
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
1E-5
1E-6
5.0 10
1.0
1.2
1.4
TYPICAL CAPACITANCE AT 0 V = 170 pF
T
J
= 125°C
25°C
T
J
= 125°C
25°C
85°C
FREQ = 20 kHz
dc
SQUARE WAVE
I
pk
/I
o
= 5.0
I
pk
/I
o
= p
I
pk
/I
o
= 10
I
pk
/I
o
= 20
NTMSD3P102R2
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8
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
Figure 20. Forward Power Dissipation
0
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0.5
0.4
0.3
0.2
0.1
0
0.5
, AVERAGE POWER DISSIPATION (WATTS)P
FO
1.0 1.5 2.0
0.6
0.7
SQUARE
WAVE
dc
I
pk
/I
o
= 5.0
I
pk
/I
o
= p
I
pk
/I
o
= 10
I
pk
/I
o
= 20
Figure 21. Schottky Thermal Response
t, TIME (s)
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1.0
0.1
D = 0.5
SINGLE PULSE
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02 1.0E+03
0.001
0.01
NORMALIZED TO R
q
JA
AT STEADY STATE (1 PAD)
CHIP
JUNCTION
0.0031 W
0.0014 F
0.0154 W
0.0082 F
0.1521 W
0.1052 F
0.4575 W
2.7041 F
0.3719 W
158.64 F
AMBIENT
NTMSD3P102R2
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9
PACKAGE DIMENSIONS
SO-8 NB
CASE 751-07
ISSUE AH
SEATING
PLANE
1
4
58
N
J
X 45
_
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751-01 THRU 751-06 ARE OBSOLETE. NEW
STANDARD IS 751-07.
A
B
S
D
H
C
0.10 (0.004)
DIM
A
MIN MAX MIN MAX
INCHES
4.80 5.00 0.189 0.197
MILLIMETERS
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0 8 0 8
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
-X-
-Y-
G
M
Y
M
0.25 (0.010)
-Z-
Y
M
0.25 (0.010) Z
S
X
S
M
____
1.52
0.060
7.0
0.275
0.6
0.024
1.270
0.050
4.0
0.155
ǒ
mm
inches
Ǔ
SCALE 6:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 18:
PIN 1. ANODE
2. ANODE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. CATHODE
8. CATHODE
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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NTMD3P102R2/D
FETKY is a registered trademark of International Rectifier Corporation.
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NTMSD3P102R2SG

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ON Semiconductor
Description:
IGBT Transistors MOSFET FETKY 20V .085R TR
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