Document #: 001-43258 Rev. *E Page 7 of 13
AC Electrical Specifications
Parameter Description Conditions Min Typ Max Unit
F
IN
(crystal) Crystal frequency, XIN – 8 – 48 MHz
F
IN
(clock) Input clock frequency, EXCLKIN
–
8–166MHz
F
CLK
Output clock frequency – 3 – 166 MHz
DC1 Output duty cycle, All clocks
except Ref Out
Duty cycle is defined in Figure 3 on page 8; t
1
/t
2
,
measured at 50% of V
DD
_
CLK_BX
45 50 55 %
DC2 Ref out duty cycle Ref In Min 45%, Max 55% 40 – 60 %
T
RF1
[1]
Output rise/fall time Measured from 20% to 80% of V
DD
_
CLK_BX
, as
shown in Figure 4 on page 8, C
LOAD
= 15 pF, Drive
strength [00]
–6.8–ns
T
RF2
[1]
Output rise/fall time Measured from 20% to 80% of V
DD
_
CLK_BX
, as
shown in Figure 4 on page 8, C
LOAD
= 15 pF, Drive
strength [01]
–3.4–ns
T
RF3
[1]
Output rise/fall time Measured from 20% to 80% of V
DD
_
CLK_BX
, as
shown in Figure 4 on page 8, C
LOAD
= 15 pF, Drive
strength [10]
–2.0–ns
T
RF4
[1]
Output rise/fall time Measured from 20% to 80% of V
DD
_
CLK_BX
, as
shown in Figure 4 on page 8, C
LOAD
= 15 pF, Drive
strength [11]
–1.0–ns
T
CCJ
[1,2]
Cycle-to-cycle jitter (peak) Configuration dependent. See Table 3 –100– ps
T
LOCK
[1]
PLL lock time Measured from 90% of the applied power supply
level
–13ms
Table 3. Configuration Example for C-C Jitter
Ref. Freq.
(MHz)
CLK1 Output CLK2 Output CLK3 Output CLK4 Output CLK5 Output
Freq.
(MHz)
C-C Jitter
Typ (ps)
Freq.
(MHz)
C-C Jitter
Typ (ps)
Freq.
(MHz)
C-C Jitter
Typ (ps)
Freq.
(MHz)
C-C Jitter
Typ (ps)
Freq.
(MHz)
C-C Jitter
Typ (ps)
14.3181 8.0 134 166 103 48 92 74.25 81 Not Used
19.2 74.25 99 166 94 8 91 27 110 48 75
27 48 67 27 109 166 103 74.25 97 Not Used
48 48 93 27 123 166 137 166 138 8 103
Recommended Crystal Specification for SMD Package
Parameter Description Range 1 Range 2 Range 3 Unit
F
IN
Crystal frequency 8 – 14 14 – 28 28 – 48 MHz
R1 Maximum motional resistance (ESR) 135 50 30
CL Parallel load capacitance (device has internal load capacitance adjustment
feature)
8 – 18 8 – 14 8 – 12 pF
DL(max) Maximum crystal drive level 300 300 300 µW
Recommended Crystal Specification for Thru-Hole Package
Parameter Description Range 1 Range 2 Range 3 Unit
F
IN
Crystal frequency 8 – 14 14 – 24 24 – 32 MHz
R1 Maximum motional resistance (ESR) 90 50 30
CL Parallel load capacitance (device has internal load capacitance
adjustment feature)
8 – 18 8 – 12 8 – 12 pF
DL(max) Maximum crystal drive level 1000 1000 1000 µW
