IXFT4N100Q Datasheet IXFH4N100Q, IXFT4N100Q | P1-P3

1 - 4

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 1000 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MW 1000 V

V

GS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C 4 A

I

DM

T

C

= 25°C, pulse width limited by T

JM

16 A

I

AR

T

C

= 25°C 4 A

E

AR

T

C

= 25°C 20mJ

E

AS

700 mJ

dv/dt I

S

£ I

DM

, di/dt £ 100 A/ms, V

DD

£ V

DSS

, 5 V/ns

T

J

£ 150°C, R

G

= 2 W

P

D

T

C

= 25°C 150 W

T

J

-55 to +150 °C

T

JM

150 °C

T

stg

-55 to +150 °C

T

L

1.6 mm (0.063 in) from case for 10 s 300 °C

M

d

Mounting torque 1.13/10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g

,

High dv/dt

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

V

DSS

V

GS

= 0 V, I

D

= 1 mA 1000 V

V

GS(th)

V

DS

= V

GS

, I

D

= 1.5 mA 3.0 5.0 V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

T

J

= 25°C50mA

V

GS

= 0 V T

J

= 125°C1mA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

3.0 W

Pulse test, t £ 300 ms, duty cycle d £ 2 %

98648A (03/24/00)

TO-247 AD (IXFH)

G = Gate D = Drain

S = Source TAB = Drain

HiPerFET

TM

Power MOSFETs

Q-Class

TO-268 (D3) ( IXFT)

(TAB)

G

S

IXFH 4N100Q

IXFT 4N100Q

Preliminary Data Sheet

(TAB)

G

S

D

IXYS reserves the right to change limits, test conditions, and dimensions.

Features

• IXYS advanced low Q

g

process

• Low gate charge and capacitances

- easier to drive

- faster switching

• International standard packages

• Low R

DS (on)

• Unclamped Inductive Switching (UIS)

rated

• Molding epoxies meet UL 94 V-0

flammability classification

Advantages

• Easy to mount

• Space savings

• High power density

V

DSS

= 1000 V

I

D25

= 4 A

R

DS(on)

= 3.0 W

t

rr

£ 250 ns

2 - 4

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

V

DS

= 20 V; I

D

= 0.5 • I

D25

, pulse test 1.5 2.5 S

C

iss

1050 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 120 pF

C

rss

30 pF

t

d(on)

17 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

15 ns

t

d(off)

R

G

= 4.7 W (External), 32 ns

t

f

18 ns

Q

g(on)

39 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

9nC

Q

gd

22 nC

R

thJC

0.8 K/W

R

thCK

(TO-247) 0.25 K/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

V

GS

= 0 V 4 A

I

SM

Repetitive; pulse width limited by T

JM

16 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t £ 300 ms, duty cycle d £ 2 %

t

rr

250 ns

Q

RM

I

F

= I

S

, -di/dt = 100 A/ms, V

R

= 100 V 0.52 mC

I

RM

1.8 A

IXFH 4N100Q

IXFT 4N100Q

TO-247 AD (IXFH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800

B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640

D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216

F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084

H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055

K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209

M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201

A

1

2.7 2.9 .106 .114

A

2

.02 .25 .001 .010

b 1.15 1.45 .045 .057

b

2

1.9 2.1 .75 .83

C .4 .65 .016 .026

D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632

E

1

13.3 13.6 .524 .535

e 5.45 BSC .215 BSC

H 18.70 19.10 .736 .752

L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055

L2 1.00 1.15 .039 .045

L3 0.25 BSC .010 BSC

L4 3.80 4.10 .150 .161

TO-268AA (D

3

PAK)

Min. Recommended Footprint

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

3 - 4

IXFH 4N100Q

IXFT 4N100Q

V

DS

- Volts

0246810

I

D

- Amperes

0

1

2

3

4

V

DS

- Volts

0 5 10 15 20

I

D

- Amperes

0

1

2

3

4

T

J

- Degrees C

25 50 75 100 125 150

R

DS(ON)

- Normalized

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

V

GS

- Volts

345678

I

D

- Amperes

0

1

2

3

4

I

D

- Amperes

0123456

R

DS(ON)

-

Normalized

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

V

CE

- Volts

0 4 8 12 16 20

I

D

- Amperes

0

1

2

3

4

5

6

7V

6V

V

GS

= 10V

V

GS

= 10V

9V

8V

T

J

= 25°C

V

GS

= 10V

9V

8V

T

J

= 25°C

T

J

= 125°C

5V

T

J

= 25°C

T

J

= 125°C

6V

7V

5V

6V

7V

V

GS

= 10V

9V

8V

T

J

= 125

O

C

V

GS

= 10V

I

D

= 2A

T

J

= 25

O

C

Figure 1. Output Characteristics at 25

O

C Figure 2. Extended Output Characteristics at 125

O

C

Figure 3. R

DS(on)

normalized to 0.5 I

D25

value vs. I

D

Figure 6. R

DS(on)

normalized to 0.5 I

D25

value vs. T

J

Figure 5. R

DS(on)

normalized to 0.5 I

D25

value vs. I

D

Figure 4. Admittance Curves

IXFT4N100Q

IXFT4N100Q

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