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IXFT4N100Q

P1-P3P4-P4
4 - 4
© 2000 IXYS All rights reserved
IXFH 4N100Q
IXFT 4N100Q
T
C
- Degrees Centigrade
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0
1
2
3
4
5
Pulse Width - Seconds
10
-4
10
-3
10
-2
10
-1
10
0
10
1
R(th)
JC
- K/W
0.01
0.10
1.00
V
DS
- Volts
0 5 10 15 20 25 30 35
Capacitance - pF
10
100
1000
V
SD
- Volts
0.2 0.4 0.6 0.8 1.0 1.2
I
D
- Amperes
0
2
4
6
8
10
Gate Charge - nC
0 102030405060
V
GS
- Volts
0
3
6
9
12
15
Crss
Coss
Ciss
V
DS
= 600 V
I
D
= 3 A
I
G
= 10 mA
f = 1MHz
T
J
= 125
O
C
T
J
= 25
O
C
60
2000
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure10. Drain Current vs. Case Temperature
Figure 11. Transient Thermal Resistance
P1-P3P4-P4

IXFT4N100Q

Mfr. #:
Buy IXFT4N100Q
Manufacturer:
Littelfuse
Description:
MOSFET 4 Amps 1000V 2.8 Rds
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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