IRFS/SL7430PbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014
2
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.15mH
R
G
= 50Ω, I
AS
= 100A, V
GS
=10V.
I
SD
≤ 100A, di/dt ≤ 990A/μs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C..
Limited by T
Jmax
starting
T
J
= 25°C, L= 1mH, R
G
= 50Ω, I
AS
= 54A, V
GS
=10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
http://www.irf.com/technical-info/appnotes/an-994.pdf
Absolute Maximum Ratings
Symbol Parameter Units
I
@ T
= 25°C Continuous Drain Current, V
@ 10V (Silicon Limited)
I
@ T
= 100°C Continuous Drain Current, V
@ 10V (Silicon Limited)
I
@ T
= 25°C Continuous Drain Current, V
@ 10V (Wire Bond Limited)
I
Pulsed Drain Current
P
@T
= 25°C Maximum Power Dissipation W
Linear Derating Factor
W/°C
V
Gate-to-Source Voltage V
T
Operating Junction and
T
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
E
Single Pulse Avalanche Energy
mJ
E
Single Pulse Avalanche Energy
I
Avalanche Current
A
E
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
Junction-to-Case ––– 0.40
R
Junction-to-Ambient (PCB Mount, steady-state) ––– 40
°C/W
A
°C
300
760
See Fig. 15, 16, 22a, 22b
375
Max.
426
301
1524
195
1452
-55 to + 175
± 20
2.5
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
Drain-to-Source Breakdown Voltage 40 ––– ––– V
V
/
T
Breakdown Voltage Temp. Coefficient ––– 0.014 ––– V/°C
––– 0.97 1.2
m
––– 1.2 ––– V
= 6.0V, I
= 50A
V
Gate Threshold Voltage 2.2 ––– 3.9 V
I
Drain-to-Source Leakage Current ––– ––– 1.0 μA
––– ––– 150
I
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
Internal Gate Resistance ––– 2.1 –––
R
DS(on)
V
= 10V, I
= 100A
Conditions
V
= 0V, I
= 250μA
Reference to 25°C, I
= 1.0mA
V
= V
, I
= 250μA
Static Drain-to-Source On-Resistance
V
= 20V
V
= -20V
V
= 40V, V
= 0V
V
= 40V, V
= 0V, T
= 125°C
