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IRFS7430TRLPBF

P1-P3P4-P6P7-P9P10-P12
IRFS/SL7430PbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 20147
Fig. 18 - Typical Recovery Current vs. di
f
/dt
Fig 17. Threshold Voltage vs. Temperature
Fig. 20 - Typical Stored Charge vs. di
f
/dtFig. 19 - Typical Recovery Current vs. di
f
/dt
Fig. 21 - Typical Stored Charge vs. di
f
/dt
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250μA
I
D
= 1.0mA
I
D
= 1.0A
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
2
4
6
8
10
12
I
R
R
M
(
A
)
I
F
= 100A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
60
100
140
180
220
260
Q
R
R
(
n
C
)
I
F
= 100A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
50
100
150
200
250
300
Q
R
R
(
n
C
)
I
F
= 60A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
2
4
6
8
10
12
I
R
R
M
(
A
)
I
F
= 60A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
IRFS/SL7430PbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014
8
Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
V
GS
IRFS/SL7430PbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 20149
D
2
Pak (TO-263AB) Part Marking Information
D
2
Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
DAT E CODE
YEAR 0 = 2000
WE E K 02
A = AS S E MB L Y S I T E CODE
RE CT IF IER
INT ERNAT IONAL
PART NUMBER
P = DE S I GNAT E S L E AD - F R E E
PRODUCT (OPT IONAL)
F 530S
IN THE ASS EMBLY LINE "L"
AS SEMBLED ON WW 02, 2000
T HIS IS AN IRF 530S WIT H
LOT CODE 8024
INT ERNAT IONAL
LOGO
RECT IF IER
LOT CODE
AS S E MB L Y
YEAR 0 = 2000
PART NUMBER
DAT E CODE
LINE L
WE E K 02
OR
F 530S
LOGO
AS S E MB L Y
LOT CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
P1-P3P4-P6P7-P9P10-P12

IRFS7430TRLPBF

Mfr. #:
Buy IRFS7430TRLPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 40V StrongIRFET 195A, 1.2mOhm,300nC
Lifecycle:
New from this manufacturer.
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