OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRFS7430TRLPBF

P1-P3P4-P6P7-P9P10-P12
IRFS/SL7430PbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014
4
Fig 3. Typical Output Characteristics
Fig 5. Typical Transfer Characteristics
Fig 6. Normalized On-Resistance vs. Temperature
Fig 4. Typical Output Characteristics
Fig 8. Typical Gate Charge vs. Gate-to-Source VoltageFig 7. Typical Capacitance vs. Drain-to-Source Voltage
2 3 4 5 6 7
V
GS
, Gate-to-Source Voltage (V)
1.0
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 25V
≤60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 100A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
BOTTOM 4.5V
≤
60μs PULSE WIDTH
Tj = 25°C
4.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
≤
60μs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
BOTTOM 4.5V
0 50 100 150 200 250 300 350 400
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 32V
V
DS
= 20V
I
D
= 100A
IRFS/SL7430PbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 20145
Fig 10. Maximum Safe Operating Area
Fig 11. Drain-to-Source Breakdown Voltage
Fig 9. Typical Source-Drain Diode
Forward Voltage
Fig 12. Typical C
OSS
Stored Energy
0.0 0.5 1.0 1.5 2.0 2.5
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Temperature ( °C )
40
41
42
43
44
45
46
47
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
(
V
)
Id = 1.0mA
Fig 13. Typical On-Resistance vs. Drain Current
0 5 10 15 20 25 30 35 40 45
V
DS,
Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
E
n
e
r
g
y
(
μ
J
)
V
DS
= 0V to 32V
0 200 400 600 800 1000 1200
I
D
, Drain Current (A)
0.0
2.0
4.0
6.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
V
GS
= 5.5V
V
GS
= 6.0V
V
GS
= 7.0V
V
GS
= 8.0V
V
GS
=10V
0.1 1 10 100
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100μsec
DC
IRFS/SL7430PbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014
6
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 15. Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 14)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = DT/ Z
thJC
I
av
=
2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
I
D
= 100A
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
P1-P3P4-P6P7-P9P10-P12

IRFS7430TRLPBF

Mfr. #:
Buy IRFS7430TRLPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 40V StrongIRFET 195A, 1.2mOhm,300nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet