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2N7002F,215

P1-P3P4-P6P7-P9P10-P12P13-P13
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
2N7002F
N-channel TrenchMOS FET
Rev. 03 — 28 April 2006 Product data sheet
■ Logic level threshold compatible ■ Very fast switching
■ Surface-mounted package ■ TrenchMOS technology
■ Logic level translator ■ High-speed line driver
■ V
DS
≤ 60 V ■ I
D
≤ 475 mA
■ R
DSon
≤ 2 Ω ■ P
tot
≤ 0.83 W
Table 1: Pinning
Pin Description Simplified outline Symbol
1 gate (G)
SOT23
2 source (S)
3 drain (D)
12
3
S
D
G
mbb076
2N7002F_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 28 April 2006 2 of 12
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
3. Ordering information
4. Limiting values
Table 2: Ordering information
Type number Package
Name Description Version
2N7002F TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 150 °C - 60 V
V
DGR
drain-gate voltage (DC) 25 °C ≤ T
j
≤ 150 °C; R
GS
=20kΩ -60V
V
GS
gate-source voltage - ±30 V
V
GSM
peak gate-source voltage t
p
≤ 50 µs; pulsed; duty cycle = 25 % - ±40 V
I
D
drain current T
sp
=25°C; V
GS
= 10 V; see Figure 2 and 3 - 475 mA
T
sp
= 100 °C; V
GS
= 10 V; see Figure 2 - 300 mA
I
DM
peak drain current T
sp
=25°C; pulsed; t
p
≤ 10 µs; see Figure 3 - 1.9 A
P
tot
total power dissipation T
sp
=25°C; see Figure 1 - 0.83 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature −65 +150 °C
Source-drain diode
I
S
source current T
sp
=25°C - 475 mA
I
SM
peak source current T
sp
=25°C; pulsed; t
p
≤ 10 µs - 1.9 A
P1-P3P4-P6P7-P9P10-P12P13-P13

2N7002F,215

Mfr. #:
Buy 2N7002F,215
Manufacturer:
Nexperia
Description:
IGBT Transistors MOSFET N-CH TRNCH 60V .475A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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