OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

2N7002F,215

P1-P3P4-P6P7-P9P10-P12P13-P13
2N7002F_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 28 April 2006 3 of 12
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
Fig 1. Normalized total power dissipation as a
function of solder point temperature
Fig 2. Normalized continuous drain current as a
function of solder point temperature
T
sp
=25°C; I
DM
is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
03aa17
0
40
80
120
0 50 100 150 200
T
sp
(
°
C)
P
der
(%)
03aa25
0
40
80
120
0 50 100 150 200
T
sp
(
°
C)
I
der
(%)
P
der
P
tot
P
tot 25 C
°
()
------------------------
100 %×= I
der
I
D
I
D25 C
°
()
---------------------
100 %×=
03ai11
10
-2
10
-1
1
10
1 10 10
2
V
DS
(V)
I
D
(A)
DC
1 ms
100
µ
s
Limit R
DSon
= V
DS
/ I
D
10 ms
100 ms
10
µ
s
t
p
=
2N7002F_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 28 April 2006 4 of 12
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
5. Thermal characteristics
[1] Mounted on a printed-circuit board; minimum footprint; vertical in still air
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
thermal resistance from junction to solder point see Figure 4 - - 150 K/W
R
th(j-a)
thermal resistance from junction to ambient
[1]
- - 350 K/W
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
003aab358
1
10
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
1 10
t
p
(s)
Z
th(j-sp)
(K/W)
single pulse
0.2
0.1
0.05
δ =
0.5
0.02
2N7002F_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 28 April 2006 5 of 12
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
6. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
=10µA; V
GS
=0V
T
j
=25°C 60--V
T
j
= −55 °C 55--V
V
GS(th)
gate-source threshold voltage I
D
= 0.25 mA; V
DS
=V
GS
; see Figure 9 and 10
T
j
=25°C 1 2 2.5 V
T
j
= 150 °C 0.6 - - V
T
j
= −55 °C - - 2.75 V
I
DSS
drain leakage current V
DS
=48V; V
GS
=0V
T
j
=25°C - 0.01 1 µA
T
j
= 150 °C --10µA
I
GSS
gate leakage current V
GS
= ±15 V; V
DS
= 0 V - 10 100 nA
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 500 mA; see Figure 6 and 8
T
j
=25°C - 0.78 2 Ω
T
j
= 150 °C - 1.45 3.7 Ω
V
GS
= 4.5 V; I
D
= 75 mA; see Figure 6 and 8 - 1.2 4 Ω
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 300 mA; V
DS
=30V; V
GS
=10V;
see
Figure 11 and 12
- 0.69 - nC
Q
GS
gate-source charge - 0.1 - nC
Q
GD
gate-drain charge - 0.27 - nC
C
iss
input capacitance V
GS
=0V; V
DS
= 10 V; f = 1 MHz;
see
Figure 14
- 3150pF
C
oss
output capacitance - 6.8 30 pF
C
rss
reverse transfer capacitance - 3.5 10 pF
t
on
turn-on time V
DS
=50V; R
L
= 250 Ω; V
GS
=10V;
R
G
=50Ω; R
GS
=50Ω
- 2.5 10 ns
t
off
turn-off time - 11 15 ns
Source-drain diode
V
SD
source-drain voltage I
S
= 300 mA; V
GS
= 0 V; see Figure 13 - 0.85 1.5 V
t
rr
reverse recovery time I
S
= 300 mA; dI
S
/dt = −100 A/µs; V
GS
=0V - 30 - ns
Q
r
recovered charge - 30 - nC
P1-P3P4-P6P7-P9P10-P12P13-P13

2N7002F,215

Mfr. #:
Buy 2N7002F,215
Manufacturer:
Nexperia
Description:
IGBT Transistors MOSFET N-CH TRNCH 60V .475A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet