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2N7002F,215
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
2N7002F_3
© Koninklijk
e Philips Electronics N.V
. 2006. All rights reser
ved.
Product data sheet
Rev
. 03 — 28 April 2006
6 of 12
Philips Semiconductors
2N7002F
N-channel T
renchMOS FET
T
j
=2
5
°
CT
j
=2
5
°
C
Fig 5.
Output characteristics: drain current as a
function of drain-source v
oltage; typical values
Fig 6.
Drain-source on-state resistance as a function
of drain current; typical values
T
j
=2
5
°
C and 150
°
C; V
DS
>I
D
×
R
DSon
Fig 7.
T
ransfer characteristics: drain current as a
function of gate-source v
oltage; typical values
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature
03ai13
0
0.
2
0.
4
0.
6
0.
8
1
0
0
.5
1
1
.5
2
V
DS
(V)
I
D
(A)
10
5
4.
5
4
3.
5
V
GS
(V) =
03ai15
0
1000
2000
3000
4000
5000
0
0
.2
0
.4
0
.6
0.8
1
I
D
(A)
R
DS
on
(m
Ω
)
4
5
4.
5
10
V
GS
(V) =
03ai16
0
0.
2
0.
4
0.
6
0.
8
1
0246
V
GS
(V)
I
D
(A)
T
j
= 150
°
C
25
°
C
03aa28
0
0.
6
1.
2
1.
8
2.
4
-
60
0
60
120
180
T
j
(
°
C)
a
a
R
DSon
R
DSon
2
5
C
°
()
-----------------------------
-
=
2N7002F_3
© Koninklijk
e Philips Electronics N.V
. 2006. All rights reser
ved.
Product data sheet
Rev
. 03 — 28 April 2006
7 of 12
Philips Semiconductors
2N7002F
N-channel T
renchMOS FET
I
D
= 0.25 mA; V
DS
=V
GS
T
j
=2
5
°
C; V
DS
=5V
Fig 9.
Gate-source threshold v
oltage as a function of
junction temperature
Fig 10.
Sub-threshold drain current as a function of
gate-source v
oltage
I
D
= 300 mA; V
DS
=3
0V
Fig 11.
Gate-source v
oltage as a function of gate
charge; typical v
alues
Fig 12.
Gate charge wa
veform definitions
003aab101
0
1
2
3
-
60
0
60
120
180
T
j
(
°
C)
V
GS(t
h)
(V)
min
ty
p
max
003aab100
10
-6
10
-5
10
-4
10
-3
0123
V
GS
(V)
I
D
(A)
min
ty
p
max
003aab359
0
2
4
6
8
10
0
0
.2
0
.4
0.6
0
.8
Q
G
(n
C)
V
GS
(V)
I
D
= 0.
3 A
T
j
= 25
°
C
V
DS
= 30 V
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
2N7002F_3
© Koninklijk
e Philips Electronics N.V
. 2006. All rights reser
ved.
Product data sheet
Rev
. 03 — 28 April 2006
8 of 12
Philips Semiconductors
2N7002F
N-channel T
renchMOS FET
T
j
=2
5
°
C and 150
°
C; V
GS
=0V
V
GS
= 0 V
; f = 1 MHz
Fig 13.
Source current as a function of sour
ce-drain
v
oltage; typical values
Fig 14.
Input,
output and
rever
se transfer
capacitances
as a function of drain-source v
oltage; typical
values
03ai17
0
0.
2
0.
4
0.
6
0.
8
1
0.
2
0.
4
0.
6
0.
8
1
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
150
°
C
03ai18
1
10
10
2
10
-1
1
10
10
2
V
DS
(V)
C
(p
F
)
C
iss
C
rs
s
C
os
s
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
2N7002F,215
Mfr. #:
Buy 2N7002F,215
Manufacturer:
Nexperia
Description:
IGBT Transistors MOSFET N-CH TRNCH 60V .475A
Lifecycle:
New from this manufacturer.
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