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NTY100N10G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1 Publication Order Number:
NTY100N10/D
NTY100N10
Preferred Device
Power MOSFET 123 A,
100 V N−Channel
Enhancement−Mode TO264
Package
Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified
• IDSS and R
DS(on)
Specified at Elevated Temperature
• Pb−Free Package is Available*
Applications
• PWM Motor Control
• Power Supplies
• Converters
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−Source Voltage V
DSS
100 V
Drain−Gate Voltage (R
GS
= 1 MW) V
DGR
100 V
Gate−Source Voltage
− Continuous
− Non−Repetitive (t
p
v 10 ms)
V
GS
V
GSM
$ 20
$ 40
V
V
Drain Current (Note 1)
− Continuous @ T
C
= 25°C
− Pulsed
I
D
I
DM
123
369
A
A
Total Power Dissipation (Note 1)
Derate above 25°C
P
D
313
2.5
Watts
W/°C
Operating and Storage Temperature Range T
J
, T
stg
−55 to
150
°C
Single Pulse Drain−to−Source
Avalanche Energy − Starting T
J
= 25°C
(V
DD
= 80 Vdc, V
GS
= 10 Vdc,
Peak I
L
= 100 Apk, L = 0.1 mH, R
G
= 25 W)
E
AS
500 mJ
Thermal Resistance − Junction to Case
− Junction to Ambient
R
q
JC
R
q
JA
0.4
25
°C/W
Maximum Lead Temperature for Soldering
Purposes, 0.125 in from case for 10 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 ms, Duty−Cycle = 2%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
NTY100N10 TO−264 25 Units/Rail
123 A, 100 V
9 mW @ V
GS
= 10 V (Typ)
D
G
N−Channel
S
MARKING DIAGRAM &
PIN ASSIGNMENT
NTY100N10
AYYWWG
A = Assembly Location
YY = Year
WW = Work Week
G = Pb−Free Package
TO−264
CASE 340G
STYLE 1
1
2
3
123
GDS
NTY100N10G TO−264
(Pb−Free)
25 Units/Rail
http://onsemi.com
NTY100N10
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0, I
D
= 250 mA)
(Positive Temperature Coefficient)
V
(BR)DSS
100
−
−
144
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
= 25°C)
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
10
100
mAdc
Gate−Body Leakage Current
(V
GS
= $20 Vdc, V
DS
= 0)
I
GSS
− −
100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 mAdc)
(Negative Temperature Coefficient)
V
GS(th)
2.0
−
3.1
10.6
4.0
−
Vdc
mV/°C
Static Drain−Source On−State Resistance
(V
GS
= 10 Vdc, I
D
= 50 Adc)
(V
GS
= 10 Vdc, I
D
= 50 Adc, 150°C)
R
DS(on)
−
−
0.009
0.019
0.010
0.021
W
Drain−Source On−Voltage (V
GS
= 10 Vdc, I
D
= 100 Adc) V
DS(on)
− 0.8 1.0 Vdc
Forward Transconductance (V
DS
= 6 Vdc, I
D
= 50 Adc) g
FS
− 73 − Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc, f = 1 MHz)
C
iss
− 7225 10110 pF
Output Capacitance C
oss
− 1800 2540
Reverse Transfer Capacitance C
rss
− 270 540
SWITCHING CHARACTERISTICS (Notes 2, 3)
Turn−On Delay Time
(V
DD
= 50 Vdc, I
D
= 100 Adc,
V
GS
= 10 Vdc, R
G
= 9.1 W)
t
d(on)
− 30 55 ns
Rise Time t
r
− 150 265
Turn−Off Delay Time t
d(off)
− 340 595
Fall Time t
f
− 250 435
Total Gate Charge
(V
DS
= 80 Vdc, I
D
= 100 Adc,
V
GS
= 10 Vdc)
Q
T
− 200 350 nC
Gate−Source Charge Q
1
− 40 −
Q
2
− 100 −
Q
3
− 86 −
BODY−DRAIN DIODE RATINGS (Note 2)
Forward On−Voltage
(I
S
= 100 Adc, V
GS
= 0 Vdc)
(I
S
= 100 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
−
−
1.02
0.94
1.1
−
Vdc
Reverse Recovery Time
(I
S
= 100 Adc, V
GS
= 0 Vdc, dI
S
/dt = 100 A/ms)
t
rr
− 210 − ns
t
a
− 155 −
t
b
− 55 −
Reverse Recovery Stored Charge Q
RR
− 1.08 − mC
2. Indicates Pulse Test: Pulse Width v300 ms max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.
NTY100N10
http://onsemi.com
3
0
50
100
150
200
0246810
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
= 6.0 V
Figure 1. On−Region Characteristics
V
GS
= 5.6 V
V
GS
= 5.0 V
V
GS
= 4.6 V
V
GS
= 8.0 V
V
GS
= 7.0 V
V
GS
= 6.5 V
V
GS
= 9.0 V
V
GS
= 10 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0 50 100 150 200
R
DS(on)
, DRAIN−TO−SOURCE CURRENT (W)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. On−Region Characteristics
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain
Current and Temperature
T = 100°C
T = 25°C
T = −55°C
V
GS
= 10 V
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
D
, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage
Current versus Voltage
0
50
100
150
200
0246810
I
D
, DRAIN CURRENT (A)
T
J
= 25°C
T
J
= 100°C
V
DS
w 10 V
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)I
DSS
, LEAKAGE (nA)
T
J
= −55°C
0.0075
0.008
0.0085
0.009
0.0095
0 50 100 150 20
V
GS
= 10 V
V
GS
= 15 V
T = 25°C
0
0.5
1.0
1.5
2.0
2.5
−50 −25 0 25 50 75 100 125 150
I
D
= 50 A
V
GS
= 10 V
1.0
10
100
1000
10000
100000
1000000
02040608010
0
T
J
= 125°C
T
J
= 100°C
V
GS
= 0 V
P1-P3P4-P6P7-P8

NTY100N10G

Mfr. #:
Buy NTY100N10G
Manufacturer:
ON Semiconductor
Description:
MOSFET 100V 123A N-Channel
Lifecycle:
New from this manufacturer.
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