NTY100N10G

NTY100N10
http://onsemi.com
7
SAFE OPERATING AREA
1
0.1
0.01
1.0E05 1.0E04 1.0E03 1.0E02 1.0E01 1.0E+00 1.0E+01
t, TIME (s)
D = 0.5
0.2
r
(t)
, EFFECTIVE TRANSIENT THERMAL RESISTAN
C
(NORMALIZED)
0.1
0.05
0.02
0.01
Figure 13. Thermal Response
R
q
JC
(t) = r(t) R
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
R
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
SINGLE PULSE
Figure 14. Diode Reverse Recovery Waveform
di/
dt
t
rr
t
a
t
p
I
S
0.25 I
S
TIME
I
S
t
b
NTY100N10
http://onsemi.com
8
PACKAGE DIMENSIONS
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
DIM
A
MIN MAX MIN MAX
INCHES
28.0 29.0 1.102 1.142
MILLIMETERS
B 19.3 20.3 0.760 0.800
C 4.7 5.3 0.185 0.209
D 0.93 1.48 0.037 0.058
E 1.9 2.1 0.075 0.083
F 2.2 2.4 0.087 0.102
G 5.45 BSC 0.215 BSC
H 2.6 3.0 0.102 0.118
J 0.43 0.78 0.017 0.031
K 17.6 18.8 0.693 0.740
L 11.2 REF 0.411 REF
N 4.35 REF 0.172 REF
P 2.2 2.6 0.087 0.102
Q 3.1 3.5 0.122 0.137
R 2.25 REF 0.089 REF
U 6.3 REF 0.248 REF
W 2.8 3.2 0.110 0.125
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
0.25 (0.010)
M
TB
M
J
R
H
N
U
L
P
A
K
C
E
F
D
G
W
2 PL
3 PL
0.25 (0.010)
M
TB
S
123
B
T
TO3BPL (TO264)
CASE 340G02
ISSUE J
Q
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NTY100N10G

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MOSFET 100V 123A N-Channel
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