NXP Semiconductors
MF1S70YYX_V1
MIFARE Classic EV1 4K - Mainstream contactless smart card IC for fast and easy solution development
MF1S70yyX_V1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 3.2 — 23 November 2017
COMPANY PUBLIC 279332 25 / 37
Table 26. MIFARE Increment, Decrement and Restore command
Name Code Description Length
Cmd C1h Increment 1 byte
Cmd C0h Decrement 1 byte
Cmd C2h Restore 1 byte
Addr - MIFARE source block address (00h to FFh) 1 byte
CRC - CRC according to Ref. 4 2 bytes
Data - Operand (4 byte signed integer) 4 bytes
NAK see Table 10 see Section 9.3 4-bit
Table 27. MIFARE Increment, Decrement and Restore timing
T
ACK
min T
ACK
max T
NAK min
T
NAK max
T
TimeOut
Increment,
Decrement, and
Restore part 1
n=9 T
TimeOut
n=9 T
TimeOut
5 ms
Increment,
Decrement, and
Restore part 2
n=9 T
TimeOut
n=9 T
TimeOut
5 ms
Remark: The minimum required time between MIFARE Increment, Decrement, and
Restore part 1 and part 2 is the minimum required FDT according to Ref. 4. There is no
maximum time specified.
Remark: The MIFARE Increment, Decrement, and Restore commands require a
MIFARE Transfer to store the value into a destination block.
Remark: The MIFARE Increment, Decrement, and Restore command part 2 does not
provide an acknowledgement, so the regular time out has to be used instead.
12.5 MIFARE Transfer
The MIFARE Transfer requires a destination block address, and writes the value stored
in the Transfer Buffer into one MIFARE Classic block. The command structure is shown
in Figure 22 and Table 28.
Table 29 shows the required timing.
NXP Semiconductors
MF1S70YYX_V1
MIFARE Classic EV1 4K - Mainstream contactless smart card IC for fast and easy solution development
MF1S70yyX_V1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 3.2 — 23 November 2017
COMPANY PUBLIC 279332 26 / 37
001aan015
CRCAddrPCD Cmd
PICC ,,ACK''
368 µs
PICC ,,NAK''
NAK
Time out
T
TimeOut
T
NAK
T
ACK
59 µs
ACK
59 µs
Figure 22. MIFARE Transfer
Table 28. MIFARE Transfer command
Name Code Description Length
Cmd B0h Write the value from the Transfer
Buffer into destination block
1 byte
Addr - MIFARE destination block address
(00h to FFh)
1 byte
CRC - CRC according to Ref. 4 2 bytes
NAK see Table 10 see Section 9.3 4-bit
Table 29. MIFARE Transfer timing
T
ACK
min T
ACK
max T
NAK min
T
NAK max
T
TimeOut
Transfer n=9 T
TimeOut
n=9 T
TimeOut
10 ms
13 Limiting values
Stresses above one or more of the limiting values may cause permanent damage to the
device. Exposure to limiting values for extended periods may affect device reliability.
Table 30. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min Max Unit
I
I
input current - 30 mA
P
tot
/pack total power dissipation per package - 120 mW
T
stg
storage temperature -55 125 °C
T
amb
ambient temperature -25 70 °C
V
ESD
electrostatic discharge voltage on LA/LB
[1]
2 - kV
[1] ANSI/ESDA/JEDEC JS-001; Human body model: C = 100 pF, R = 1.5 kΩ
NXP Semiconductors
MF1S70YYX_V1
MIFARE Classic EV1 4K - Mainstream contactless smart card IC for fast and easy solution development
MF1S70yyX_V1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 3.2 — 23 November 2017
COMPANY PUBLIC 279332 27 / 37
CAUTION
This device has limited built-in ElectroStatic Discharge (ESD) protection.
The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the gates.
14 Characteristics
Table 31. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
C
i
input capacitance
[1]
14.9 16.9 19.0 pF
f
i
input frequency - 13.56 - MHz
EEPROM characteristics
t
ret
retention time T
amb
= 22 °C 10 - - year
N
endu(W)
write endurance T
amb
= 22 °C 100000 200000 - cycle
[1] T
amb
=22°C, f=13,56Mhz, V
LaLb
= 1,5 V RMS
15 Wafer specification
For more details on the wafer delivery forms see Ref. 9.
Table 32. Wafer specifications MF1S70yyXDUy
Wafer
diameter 200 mm typical (8 inches)
300 mm typical (12 inches)
maximum diameter after foil expansion 210 mm (8 inches)
not applicable (12 inches)
die separation process laser dicing (8 inches)
blade dicing (12 inches)
thickness MF1S70yyXDUD 120 μm ± 15 μm
MF1S70yyXDUF 75 μm ± 10 μm
flatness not applicable
Potential Good Dies per Wafer (PGDW) 64727 (8 inches)
147540 (12 inches)
Wafer backside
material Si
treatment ground and stress relieve
R
a
max = 0.5 μmroughness
R
t
max = 5 μm
Chip dimensions
step size
[1]
x = 658 μm (8 inches)
x = 660 μm (12 inches)

MF1S7001XDUD/V1V

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RFID Transponders MF1S7001XDUD/UNCASED//V1/WAFER SAWN FFC NDP NO MAR
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