MAX4806/MAX4807/MAX4808
Dual, Unipolar/Bipolar, High-Voltage
Digital Pulsers
10 ______________________________________________________________________________________
on and off states of the high-side FET, INN_ controls the
on and off states of the low-side FET, INC_ controls the
active clamp, and EN_ controls the gate-to-source short.
These signals give complete control of the output stage
of each driver (see Table 1 for all logic combinations).
The MAX4806/MAX4807/MAX4808 logic inputs are
CMOS logic compatible, and the logic level is refer-
enced to V
DD
for maximum flexibility. The low 5pF (typ)
input capacitance of the logic inputs reduces loading
and increases switching speed.
High-Voltage Output Protection
(MAX4807 Only)
The high-voltage outputs of the MAX4807 feature an
integrated overvoltage protection circuit that allows the
user to implement multilevel pulsing by connecting the
outputs of multiple pulser channels in parallel. Internal
diodes in series with the ON_ and OP_ outputs prevent
the body diode of the high-side and low-side FETs from
switching on when a voltage greater than V
NN_
or V
PP_
is present on the output (see Figure 9).
Active Clamps
The MAX4806/MAX4807/MAX4808 feature an active
clamp circuit to improve pulse quality and reduce 2nd
harmonic output. The clamp circuit consists of an n-
channel (DC-coupled) and a p-channel (AC and DC
delay coupled) high-voltage FETs that are switched on
or off by the logic clamp input (INC_). The MAX4806
and the MAX4807 feature protected clamp devices
allowing the clamp circuit to be used in bipolar pulsing
circuits (see Figures 1 and 2). A diode in series with the
OCN_ output prevents the body diode of the low-side
FET from turning on when a voltage lower than GND is
present. Another diode in series with the OCP_ output
prevents the body diode of the high-side FET from turn-
ing on when a voltage higher than ground is present.
The MAX4808 does not have diode protection on the
clamp outputs. Thus, the device is suitable for use in
circuits where only unipolar pulsing is required.
The user can connect the active clamp input (INC_) to a
logic-high voltage and drive only the INP_ and INN_
inputs to minimize the number of signals used to drive the
X = Don’t care.
0 = Logic-low.
1 = Logic-high.
INPUTS OUTPUTS
SHDN
EN_ INP_ INN_ INC_ OP_ ON_
OCP_,
OCN_
STATE
0 XXX0
High
Impedance
High
Impedance
High
Impedance
Powered down, INP_/INN_ disabled, gate-source
short disabled
0 XXX1
High
Impedance
High
Impedance
GND
Powered down, INP_/INN_ disabled, gate-source
short disabled
10XX0
High
Impedance
High
Impedance
High
Impedance
Powered up, INP_/INN_ disabled, gate-source short
enabled
10XX1
High
Impedance
High
Impedance
GND
Powered up, INP_/INN_ disabled, gate-source short
enabled
1 1000
High
Impedance
High
Impedance
High
Impedance
Powered up, all inputs enabled, gate-source short
disabled
1 1001
High
Impedance
High
Impedance
GND
Powered up, all inputs enabled, gate-source short
disabled
1 101X
High
Impedance
V
NN_
High
Impedance
Powered up, all inputs enabled, gate-source short
disabled
1 110X
V
PP_
High
Impedance
High
Impedance
Powered up, all inputs enabled, gate-source short
disabled
1 111X
V
PP_
V
NN_
High
Impedance
Not allowed (3ns maximum overlap)
Table 1. Truth Table
MAX4806/MAX4807/MAX4808
Dual, Unipolar/Bipolar, High-Voltage
Digital Pulsers
______________________________________________________________________________________ 11
device. In this case, whenever both the INP_ and INN_
inputs are low and the INC_ input is high, the active clamp
circuit pulls the output to GND through the OCP_ and
OCN_ outputs (see Table 1 for more information).
Power-Supply Ramping and
Gate-Source Short Circuit
The MAX4806/MAX4807/MAX4808 include a gate-
source short circuit that is controlled by the enable input
(EN_). When SHDN is high and EN_ is low, a 60Ω switch
shorts together the gate and source of the high-side out-
put FET. At the same time, a similar switch shorts the
gate and source of the low-side output FET (Table 1).
The gate-source short circuit prevents accidental turn-
on of the output FETs due to the ramping voltage on
V
PP_
and V
NN_
, and allows for faster ramping rates and
smaller delay times between pulsing modes.
Shutdown Mode
SHDN is common to both channel 1 and channel 2 and
powers up or down the device. Drive SHDN low to power
down all internal circuits (except the clamp circuits).
When SHDN is low, the device is in the lowest power
state (1µA) and the gate-source short circuit is disabled.
The device takes 36.8ns (typ) to become active when
SHDN is disabled.
Thermal Protection
A thermal-shutdown circuit with a typical threshold of
+155°C prevents damage due to excessive power dis-
sipation. When the junction temperature exceeds T
J
=
+150°C, all outputs are disabled. Normal operation typ-
ically resumes after the IC’s junction temperature drops
below +130°C.
Applications Information
AC-Coupling Capacitor Selection
The value of all AC-coupling capacitors (between C
DP_
and C
GP_
, and between C
DN_
and C
GN_
) should be
between 1nF to 10nF. The voltage rating of the capaci-
tor should be greater than V
PP_
and V
NN_
. The capaci-
tors should be placed as close as possible to the
device.
Because INP_ and part of INC_ are AC-coupled to the
output devices, they cannot be driven high indefinitely
when the device is active.
Power Dissipation
The power dissipation of the MAX4806/MAX4807/
MAX4808 consists of three major components caused
by the current consumption from V
CC_
, V
PP_
, and V
NN_
.
The sum of these components (P
VCC_
, P
VPP_
, and
P
VNN_
) must be kept below the maximum power-dissi-
pation limit. See the
Typical Operating Characteristics
section for more information on typical supply currents
versus switching frequencies.
The device consumes most of the supply current from
V
CC_
supply to charge and discharge internal nodes
such as the gate capacitance of the high-side FET (C
P
)
and the low-side FET (C
N
). Neglecting the small quies-
cent supply current and a small amount of current used
to charge and discharge the capacitances at the inter-
nal gate clamp FETs, the power consumption can be
estimated as follows:
Where f
INN_
and f
INP_
are the switching frequency of
the inputs INN_ and INP_ respectively, and where BRF
is the Burst Repetition Frequency and BTD is the Burst
Time Duration. The typical value gate capacitances of
the power FET are C
N
= 0.3µF and C
P
= 0.6µF.
For an output load that has a resistance of R
L
and
capacitance of C
L
, the MAX4806/MAX4807/MAX4808
power dissipation can be estimated as follows (assume
square-wave output and neglect the resistance of the
switches):
Where C
O
is the output capacitance of the device.
Power Supplies and Bypassing
The MAX4806/MAX4807/MAX4808 operate from inde-
pendent supply voltage sets (only V
DD
and V
SS
are
common to both channels). The logic input circuit oper-
ates from a +2.7V to +6V single supply (V
DD
). The
level-shift driver dual supplies, V
CC_
/V
EE_
operate from
±4.75V to ±12.6V.
The V
PP_
/V
NN_
high-side and low-side supplies are dri-
ven from a single positive supply up to +220V, from a
single negative supply up to -200V, or from ±110V dual
supplies. Either V
PP_
or V
NN_
can be set at 0V. Bypass
each supply input to ground with a 0.1µF capacitor as
close as possible to the device.
Depending on the application, additional bypassing
may be needed to maintain the input of both V
NN_
and
V
PP_
stable during output transitions. For example, with
C
OUT
= 100pF and R
OUT
= 100Ω load, the use of an
P
VPP_
=+
()
××
()
+CC f V V
V
R
OLIN PP NN
PP
__
_
2
2
LL
BRF BTD×
××
()
1
2
P
VCC_
×
()
×
()
×CV f CV f B
NCC IN PCC IN__
22
RRF BTD
ff f
IN INN INP
×
()
==
__
MAX4806/MAX4807/MAX4808
Dual, Unipolar/Bipolar, High-Voltage
Digital Pulsers
12 ______________________________________________________________________________________
additional 10µF (typ) electrolytic capacitor is recom-
mended. V
SS
is the substrate voltage. Connect V
SS
to a
voltage equal to or more negative than the lower of
V
NN1
or V
NN2
.
Exposed Pad and Layout Concerns
The MAX4806/MAX4807/MAX4808 provide an exposed
pad (EP) underneath the TQFN package for improved
thermal performance. EP is internally connected to V
SS
.
Connect EP to V
SS
externally. To aid heat dissipation,
connect EP to a similarly sized pad on the component
side of the PCB. This pad should be connected through
to the solder-side copper by several plated holes to a
large heat-spreading copper area to conduct heat
away from the device.
The MAX4806/MAX4807/MAX4808 high-speed pulsers
require low-inductance bypass capacitors to their sup-
ply inputs. High-speed PCB trace design practices are
recommended. Pay particular attention to minimize trace
LEVEL
SHIFTER
V
DD
V
CC_
C
DP_
INP_
V
PP_
C
GP_
OP_
V
SS
LEVEL
SHIFTER
V
DD
V
CC_
V
SS
OCN_
GND
LEVEL
SHIFTER
V
DD
V
CC_
C
DN_
INN_
V
SS
ON_
V
NN_
C
GN_
V
SS
SHORT
CIRCUIT
LEVEL
SHIFTER
V
DD
V
EE_
C
DC_
C
GC_
INC_
EN_
GND
OCP_
V
SS
MAX4806
SHDN
C
GC_
GND
C
DC_
V
EE_
C
DN_
C
GN_
V
DD
V
CC_
C
DP_
C
GP_
Figure 1. MAX4806 Simplified Functional Diagram for One Channel

MAX4806CTN+T

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Timers & Support Products Dual Uni/Bi-polar Digital Pulser
Lifecycle:
New from this manufacturer.
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