MAX4806/MAX4807/MAX4808
Dual, Unipolar/Bipolar, High-Voltage
Digital Pulsers
4 _______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= +2.7V to +6V, V
CC_
= +4.75V to +12.6V, V
EE_
= -12.6V to -4.75V, V
NN_
= -200V to 0V, V
PP_
= 0V to (V
NN_
+ 200V), V
SS
≤ the lower
of V
NN1
or V
NN2
, T
A
= T
J
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 3)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
I
OP _
= -100mA, V
C C _
= +12V ± 5%, D C -coupl ed 6 13
Low-Side Small-Signal Output
Impedance (MAX4807)
R
OUT_LS
I
OP _
= - 100m A, V
C C _
= + 5V ± 5% , D C - coup l ed 6 13
Ω
I
OP _
= -100mA, V
C C _
= +12V ± 5%, D C -coupl ed 6 12
High-Side Small-Signal Output
Impedance (MAX4806)
R
OUT_HS
I
OP _
= - 100m A, V
C C _
= + 5V ± 5% , D C - coup l ed 8 15
Ω
I
OP _
= -100mA, V
C C _
= +12V ± 5%, D C -coupl ed 7 13
High-Side Small-Signal Output
Impedance (MAX4807)
R
OUT_HS
I
OP _
= - 100m A, V
C C _
= + 5V ± 5% , D C - coup l ed 9 17
Ω
Low-Side Output Current I
OL
V
CC_
= +12V ±5%, V
OUT_
- V
NN_
= 100V 2 A
High-Side Output Current I
OH
V
CC_
= +12V ±5%, V
OUT_
- V
PP_
= 100V 2 A
MAX4806 110
Off-Output Capacitance C
O
OFF
OP_, ON_, OCP_ and OCN_
connected together;
V
PP_
= +100V, V
NN_
= -100V
MAX4807 70
pF
Off-Output Leakage Current I
LK
V
NN_
= -100V, V
PP_
= 100V, EN_
= 0,
OUT_ = -100V to +100V
-1 +1 µA
I
OC N _
= - 30m A, D C - coup l ed , V
C C _
= + 12V
± 5% , V
E E _
= - V
C C _
20 40
Low-Side Signal-Clamp Output
Impedance
R
CLS
I
OCN_
= -30mA, DC-coupled, V
CC_
= +5V
±5%, V
EE_
= -V
CC_
20 50
Ω
I
OC P _
= - 30m A, D C - coup l ed , V
C C _
= + 12V
± 5% , V
E E _
= - V
C C _
20 40
High-Side Signal-Clamp Output
Impedance
R
CHS
I
OCP_
= -30mA, DC-coupled, V
CC_
= +5V
±5%, V
EE_
= -V
CC_
33 50
Ω
V
CC_
= +12V ±5%, V
EE_
= -V
CC_
, I
CGN_
=
10mA, V
EN_
= 0
100 Ω
Low-Side Gate Short Impedance R
LSH
V
CC_
= +12V ±5%, V
EE_
= -V
CC_
, I
CGN_
=
10mA, EN_ = V
DD
5 7.5 10 kΩ
V
CC_
= +12V ±5%, V
EE_
= -V
CC_
, I
CGN_
=
10mA, V
EN_
= 0
100 Ω
High-Side Gate Short Impedance R
HSH
V
CC_
= +12V ±5%, V
EE_
= -V
CC_
, I
CGN_
=
10mA, EN_ = V
DD
5 7.5 10 kΩ
THERMAL SHUTDOWN
Thermal Shutdown T
SHDN
Junction temperature rising +155 °C
Thermal-Shutdown Hysteresis 20 °C
DYNAMIC CHARACTERISTICS (R
L
= 100Ω, C
L
= 100pF, unless otherwise noted. See Figures 4–7.)
Logic Input to Output Rise
Propagation Delay
t
PLH
V
CC_
= +12V, V
PP_
= +5V, V
NN_
= -5V,
Figure 4
15 ns
Logic Input to Output Fall
Propagation Delay
t
PHL
V
CC_
= +12V, V
PP_
= +5V, V
NN_
= -5V,
Figure 4
15 ns
Logic Input to Output Rise
Propagation Delay
t
POH
V
CC_
= +12V, V
PP_
= +5V, V
NN_
= -5V,
Figure 4
15 ns
Logic Input to Output Fall
Propagation Delay
t
POL
V
CC_
= +12V, V
PP_
= +5V, V
NN_
= -5V,
Figure 4
15 ns
