LTC3260
4
3260fa
Typical perForMance characTerisTics
Oscillator Frequency
vs Supply Voltage Oscillator Frequency vs R
T
Shutdown Current vs Temperature
Quiescent Current vs Temperature
Quiescent Current vs Supply
Voltage (Constant Frequency Mode)
Quiescent Current vs Temperature
(Constant Frequency Mode)
(T
A
= 25°C, C
F LY
= 1µF, C
IN
= C
OUT
= C
LDO
+
= C
LDO
–
= 10µF unless otherwise noted)
elecTrical characTerisTics
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3260 is tested under pulsed load conditions such that
T
J
≈ T
A
. The LTC3260E is guaranteed to meet specifications from
0°C to 85°C junction temperature. Specifications over the –40°C to
125°C operating junction temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC3260I is guaranteed over the –40°C to 125°C operating junction
temperature range, the LTC3260H is guaranteed over the –40°C to 150°C
operating junction temperature range and the LTC3260MP is tested and
guaranteed over the full –55°C to 150°C operating junction temperature
range. Note that the maximum ambient temperature consistent with
these specifications is determined by specific operating conditions in
conjunction
with board layout, the rated package thermal impedance and
other environmental factors.
The junction temperature (T
J
, in °C) is calculated from the ambient
temperature (T
A
, in °C) and power dissipation (P
D
, in Watts) according to
the formula:
T
J
= T
A
+ (P
D
• θ
JA
),
where θ
JA
= 43°C/W is the package thermal impedance.
Note 3: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperatures will exceed 150°C when overtemperature protection is
active. Continuous operation above the specified maximum operating
junction temperature may result in device degradation or failure.
SUPPLY VOLTAGE (V)
0
OSCILLATOR FREQUENCY (kHz)
400
500
600
15 25
3260 G01
300
200
5 10
20 30 35
100
0
R
T
= GND
R
T
= 200kΩ
R
T
(kΩ)
200
OSCILLATOR FREQUENCY (kHz)
400
600
100
300
500
1 100 1000 10000
3260 G02
0
10
TEMPERATURE (°C)
–50
SHUTDOWN CURRENT (µA)
10
20
150
3260 G03
0
0
50
100
–25
25
75
125
30
5
15
25
V
IN
= 32V
V
IN
= 12V
V
IN
= 5V
TEMPERATURE (°C)
–50
QUIESCENT CURRENT (µA)
80
120
150
3260 G04
40
0
0
50
100
–25
25
75
125
160
60
100
20
140
Burst Mode OPERATION
WITH BOTH LDOs ON
POSITIVE LDO ON
Burst Mode OPERATION
WITH NEGATIVE LDO ON
V
IN
= 12V
SUPPLY VOLTAGE (V)
0
QUIESCENT CURRENT (mA)
14
15
3260 G05
8
4
5 10 20
2
0
16
12
10
6
25 30 35
f
OSC
= 500kHz
f
OSC
= 200kHz
f
OSC
= 50kHz
TEMPERATURE (°C)
–50
0
QUIESCENT CURRENT (mA)
1
3
4
5
10
7
0
50
75
3260 G06
2
8
9
6
–25 25
100
125
150
f
OSC
= 500kHz
f
OSC
= 200kHz
f
OSC
= 50kHz
V
IN
= 12V
