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HMC329ALC3B

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
HMC329ALC3B Data Sheet
Rev. 0 | Page 4 of 23
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
RF Input Power 13 dBm
LO Input Power
24 dBm
IF Input Power 13 dBm
IF Source or Sink Current 3 mA
Peak Reflow Temperature 260°C
Maximum Junction Temperature 175°C
Continuous Power Dissipation, P
DISS
(T
A
= 85°C,
Derate 3.7 mW/°C Above 85°C)
200 mW
Operating Temperature Range −55°C to +85°C
Storage Temperature Range −65°C to +150°C
Lead Temperature (Soldering 60 sec) 260°C
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM) 1500 V, Class 1C
Field-Induced Charged Device Model
(FICDM)
1250 V, Class IV
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θ
JA
is the natural convection, junction to ambient thermal
resistance measured in a one cubic foot sealed enclosure.
θ
JC
is the junction to case thermal resistance.
Table 3. Thermal Resistance
Package Type θ
JA
θ
JC
Unit
E-12-4
1
120 445 °C/W
1
Test Condition 1: JEDEC standard JESD51-2.
ESD CAUTION
Data Sheet HMC329ALC3B
Rev. 0 | Page 5 of 23
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
GND
7
GND
8
RF
9
GND
10
NIC
11
NIC
12
NIC
4
GND
2
LO
3
GND
5
IF
6
GND
NOTES
1. NOT INTERNALLY CONNECTED. THESE PINS
CAN BE CONNECTED TO RF/DC GROUND.
PERFORMANCE IS NOT AFFECTED.
2. EXPOSED PAD. THE EXPOSED PAD MUST BE
CONNECTED TO RF/DC GROUND.
HMC329ALC3B
TOP VIEW
(Not to Scale)
16676-002
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1, 3, 4, 6, 7, 9 GND Ground. These pins must be connected to RF/dc ground. See Figure 3 for the interface schematic.
2 LO LO Port. This pin is ac-coupled and matched to 50 Ω. See Figure 4 for the interface schematic.
5 IF IF Port. This pin is dc-coupled. For applications not requiring operation to dc, dc block this port externally
using a series capacitor of a value chosen to pass the necessary IF frequency range. For operation to dc, this
pin must not source or sink more than 3 mA of current. Otherwise, die malfunction or die failure may result.
See Figure 5 for the interface schematic.
8 RF RF Port. This pin is ac-coupled and matched to 50 Ω. See Figure 6 for the interface schematic.
10, 11, 12 NIC Not Internally Connected. Connect these pins to RF/dc ground. Performance is not affected.
EPAD Exposed Pad. The exposed pad must be connected to RF/dc ground.
INTERFACE SCHEMATICS
GND
16676-003
Figure 3. GND Interface Schematic
LO
16676-004
Figure 4. LO Interface Schematic
IF
16676-005
Figure 5. IF Interface Schematic
RF
16676-006
Figure 6. RF Interface Schematic
HMC329ALC3B Data Sheet
Rev. 0 | Page 6 of 23
TYPICAL PERFORMANCE CHARACTERISTICS
DOWNCONVERTER PERFORMANCE, IF = 1000 MHz
Upper Sideband (Low-Side LO)
–30
–25
–20
–15
–5
–10
23 24 25 26 27 28 29 30 31 32
RF FREQUENCY
33
CONVERSION GAIN (dB)
–40°C
+25°C
+85°C
16676-007
Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
0
5
10
15
20
30
25
23 24 25 26 27 28 29 30 31 32
RF FREQUENCY
33
INPUT IP3 (dBm)
–40°C
+25°C
+85°C
16676-008
Figure 8. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
0
10
20
30
40
70
60
50
23 24 25
26 27 28 29 30 31 32
RF FRE
QUENCY
33
INPUT IP2 (dBm)
16676-009
–40°C
+25°C
+85°C
Figure 9. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
–30
–25
–20
–15
–5
–10
23 24 25 26 27 28 29 30 31 32
RF FREQUENCY
33
CONVERSION GAIN (dB)
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
16676-010
Figure 10. Conversion Gain vs. RF Frequency at Various LO Power Levels,
T
A
= 25°C
0
5
10
15
20
30
25
23 24
25 26 27 28 29 30 31 32
RF FREQUENCY
33
INPUT IP3 (dBm)
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
16676-011
Figure 11. Input IP3 vs. RF Frequency at Various LO Power Levels,
T
A
= 25°C
0
10
20
30
40
70
60
50
23 24 25 26 27 28 29 30 31 32
RF FREQUENCY
33
INPUT IP2 (dBm)
16676-012
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
Figure 12. Input IP2 vs. RF Frequency at Various LO Power Levels,
T
A
= 25°C
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HMC329ALC3B

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Manufacturer:
Analog Devices / Hittite
Description:
RF Mixer GaAsMMIC Fundamental
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