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BUK9620-100B,118

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Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
BUK9620-100B
N-channel TrenchMOS logic level FET
Rev. 02 — 6 May 2009 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC-Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current V
GS
=5V; T
mb
=25°C;
see Figure 1
; see Figure 3
--63A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 - - 203 W
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 4.5 V; I
D
=25A;
T
j
= 25 °C; see Figure 11;
see Figure 12
- 16.4 22.3 mΩ
V
GS
=5V; I
D
=25A;
T
j
= 25 °C; see Figure 12;
see Figure 11
- 16.2 20 mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=63A; V
sup
≤ 100 V;
R
GS
=50Ω; V
GS
=5V;
T
j(init)
= 25 °C; unclamped
- - 222 mJ
BUK9620-100B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 6 May 2009 2 of 12
NXP Semiconductors
BUK9620-100B
N-channel TrenchMOS logic level FET
2. Pinning information
3. Ordering information
4. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1G gate
SOT404
(D2PAK)
2D drain
3S source
mb D mounting base; connected to
drain
mb
13
2
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
BUK9620-100B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
SOT404
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 100 V
V
DGR
drain-gate voltage R
GS
=20kΩ -100V
V
GS
gate-source voltage -15 15 V
I
D
drain current T
mb
=25°C; V
GS
=5V; see Figure 1; see Figure 3 -63A
T
mb
=100°C; V
GS
=5V; see Figure 1 -45A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 µs; pulsed; see Figure 3 -253A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 -203W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C - 63 A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
=25°C - 253 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
=63A; V
sup
≤ 100 V; R
GS
=50Ω; V
GS
=5V;
T
j(init)
= 25 °C; unclamped
-222mJ
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BUK9620-100B,118

Mfr. #:
Buy BUK9620-100B,118
Manufacturer:
Nexperia
Description:
MOSFET MOSFET N-CH TRENCH 100V
Lifecycle:
New from this manufacturer.
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