BUK9620-100B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 6 May 2009 6 of 12
NXP Semiconductors
BUK9620-100B
N-channel TrenchMOS logic level FET
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 13
- 0.86 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=30V; T
j
=25°C
-80-ns
Q
r
recovered charge - 272 - nC
Table 6. Characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Sub-threshold drain current as a function of
gate-source voltage
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Fig 8. Forward transconductance as a function of
drain current; typical values.
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
maxtypmin
003aac771
0
30
60
90
120
150
012345
V
DS
(V)
I
D
(A)
3.4
3.2
4.5
3
2.7
2.5
10
V
GS
(V) =
003aac772
12
16
20
24
28
246810
V
GS
(V)
R
DS on
(m
Ω
)
003aac774
0
40
80
120
160
0 30 60 90 120
I
D
(A)
gfs (S)
