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TDF8590TH/N1TJ

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30
TDF8590TH_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 23 April 2007 22 of 30
NXP Semiconductors
TDF8590TH
2 × 80 W SE (4 Ω) or 1 × 160 W BTL (8 Ω) class-D amplifier
P
o
= 1 W.
(1) V
P
= ±27 V; R
L
=4Ω.
(2) V
P
= ±18 V; R
L
=2Ω.
P
o
= 1 W.
(1) V
P
= ±18 V; R
L
=4Ω.
(2) V
P
= ±27 V; R
L
=8Ω.
a. SE application b. BTL application
Fig 14. Total harmonic distortion as a function of frequency
001aad849
10
−1
10
−2
1
THD
(%)
10
−3
f (kHz)
10
−2
10
2
1010
−1
1
(1)
(2)
001aad850
10
−1
10
−2
1
THD
(%)
10
−3
f (kHz)
10
−2
10
2
1010
−1
1
(1)
(2)
P
o
= 1 W; R
S
= 0 Ω.
(1) V
P
= ±27 V; R
L
=4Ω.
(2) V
P
= ±18 V; R
L
=2Ω.
V
i(CM)
= 1 V (RMS); R
L
= 4 Ω; plus and minus input
DC shorted.
(1) SE application.
(2) BTL application.
Fig 15. Channel separation as a function of frequency Fig 16. Common mode rejection ratio as a function of
frequency
001aad851
40
60
20
80
100
α
cs
(dB)
0
f (kHz)
10
−2
10
2
1010
−1
1
(1)
(2)
001aad852
80
90
CMRR
(dB)
70
f (kHz)
10
−2
10
2
1010
−1
1
(1)
(2)
TDF8590TH_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 23 April 2007 23 of 30
NXP Semiconductors
TDF8590TH
2 × 80 W SE (4 Ω) or 1 × 160 W BTL (8 Ω) class-D amplifier
V
P
= ±27 V; R
L
=4Ω; R
S
= 0 Ω; V
ripple
= 2 V (p-p).
(1) ripple on both supply lines, ripple in phase.
(2) ripple on both supply lines, ripple in antiphase.
(3) ripple on one supply line.
V
P
= ±27 V; R
L
=8Ω; R
S
= 0 Ω; V
ripple
= 2 V (p-p).
(1) ripple on one supply line.
(2) ripple on both supply lines, ripple in antiphase.
(3) ripple on both supply lines, ripple in phase.
a. SE application b. BTL application
Fig 17. Supply voltage ripple rejection as a function of frequency; Standby mode
001aad853
80
100
120
SVRR
(dB)
60
f (kHz)
10
−2
10
2
1010
−1
1
(1)
(2)
(3)
001aad856
90
100
80
110
120
SVRR
(dB)
70
f (kHz)
10
−2
10
2
1010
−1
1
(1)
(2)
(3)
V
P
= ±27 V; R
L
=4Ω; R
S
=0Ω; V
ripple
= 2 V (p-p).
(1) ripple on both supply lines, ripple in phase.
(2) ripple on both supply lines, ripple in antiphase.
(3) ripple on one supply line.
V
P
= ±27 V; R
L
=8Ω; R
S
=0Ω; V
ripple
= 2 V (p-p).
(1) ripple on both supply lines, ripple in phase.
(2) ripple on both supply lines, ripple in antiphase.
(3) ripple on one supply line.
a. SE application b. BTL application
Fig 18. Supply voltage ripple rejection as a function of frequency; Mute mode
001aad854
40
60
20
80
100
SVRR
(dB)
0
f (kHz)
10
−2
10
2
1010
−1
1
(1)
(2)
(3)
001aad857
60
50
70
80
SVRR
(dB)
40
f (kHz)
10
−2
10
2
1010
−1
1
(1)
(2)
(3)
TDF8590TH_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 23 April 2007 24 of 30
NXP Semiconductors
TDF8590TH
2 × 80 W SE (4 Ω) or 1 × 160 W BTL (8 Ω) class-D amplifier
V
P
= ±27 V; R
L
=4Ω; R
S
=0Ω; V
ripple
= 2 V (p-p).
(1) ripple on both supply lines, ripple in phase.
(2) ripple on both supply lines, ripple in antiphase.
(3) ripple on one supply line.
V
P
= ±27 V; R
L
=8Ω; R
S
=0Ω; V
ripple
= 2 V (p-p).
(1) ripple on one supply line.
(2) ripple on both supply lines, ripple in antiphase.
(3) ripple on both supply lines, ripple in phase.
a. SE application b. BTL application
Fig 19. Supply voltage ripple rejection as a function of frequency; Operating mode
001aad855
40
60
20
80
100
SVRR
(dB)
0
f (kHz)
10
−2
10
2
1010
−1
1
(1)
(2)
(3)
001aad858
60
50
70
80
SVRR
(dB)
40
f (kHz)
10
−2
10
2
1010
−1
1
(1)
(2)
(3)
V
I
= 1 V (RMS).
(1) SE application; V
P
= ±27 V; R
L
=4Ω.
(2) BTL application; V
P
= ±18 V; R
L
=4Ω.
Fig 20. Mute attenuation as a function of frequency
001aad859
40
60
20
80
100
α
mute
(dB)
0
f (kHz)
10
−2
10
2
1010
−1
1
(1)
(2)
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TDF8590TH/N1TJ

Mfr. #:
Buy TDF8590TH/N1TJ
Manufacturer:
NXP Semiconductors
Description:
Audio Amplifiers 2 X 80 W SE (4 ) or 1 X 160 W BTL (8 ) class-D amplifier
Lifecycle:
New from this manufacturer.
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