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TDF8590TH/N1TJ
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P30
TDF8590TH_2
© NXP B.V
. 2007. All rights reserved.
Product data sheet
Rev
. 02 — 23 April 2007
25 of 30
NXP Semiconductors
TDF8590TH
2
×
80 W SE (4
Ω
) or 1
×
160 W BTL (8
Ω
) class-D amplifier
f = 1 kHz.
(1)
THD = 10 %.
(2)
THD = 0.5 %.
f = 1 kHz.
(1)
THD = 10 %.
(2)
THD = 0.5 %.
a.
R
L
=4
Ω
b.
R
L
=2
Ω
Fig 21.
Output power as a function of suppl
y v
oltage, SE application
V
P
(V)
10
40
30
20
001aad860
40
80
120
P
o
(W)
0
(1)
(2)
V
P
(V)
10
20
18
14
16
12
001aad861
40
50
30
60
70
P
o
(W)
20
(1)
(2)
f = 1 kHz.
(1)
THD = 10 %.
(2)
THD = 0.5 %.
f = 1 kHz.
(1)
THD = 10 %.
(2)
THD = 0.5 %.
a.
R
L
=8
Ω
b.
R
L
=4
Ω
Fig 22.
Output power as a function of suppl
y v
oltage, BTL application
001aad862
V
P
(V)
10
40
30
20
80
160
240
P
o
(W)
0
(1)
(2)
V
P
(V)
10
20
18
14
16
12
001aad863
80
100
60
120
140
P
o
(W)
40
(1)
(2)
TDF8590TH_2
© NXP B.V
. 2007. All rights reserved.
Product data sheet
Rev
. 02 — 23 April 2007
26 of 30
NXP Semiconductors
TDF8590TH
2
×
80 W SE (4
Ω
) or 1
×
160 W BTL (8
Ω
) class-D amplifier
f = 1 kHz.
(1)
V
P
=
±
27 V
; R
L
=4
Ω
.
(2)
V
P
=
±
18 V
; R
L
=2
Ω
.
f = 1 kHz.
(1)
V
P
=
±
27 V
; R
L
=8
Ω
.
(2)
V
P
=
±
18 V
; R
L
=4
Ω
.
a.
SE application
b
.
BTL application
Fig 23.
Efficiency as a function of output po
wer
P
o
(W)
0
100
80
40
60
20
001aad865
40
60
20
80
100
η
(%)
0
(1)
(2)
P
o
(W)
0
200
160
80
120
40
001aad867
40
60
20
80
100
η
(%)
0
(1)
(2)
f = 1 kHz.
(1)
V
P
=
±
18 V
; R
L
=2
Ω
.
(2)
V
P
=
±
27 V
; R
L
=4
Ω
.
f = 1 kHz.
(1)
V
P
=
±
18 V
; R
L
=4
Ω
.
(2)
V
P
=
±
27 V
; R
L
=8
Ω
.
a.
SE application
b
.
BTL application
Fig 24.
P
ower dissipation as a function of output po
wer
P
o
(W)
0
100
80
40
60
20
001aad864
10
20
30
P
(W)
0
(1)
(2)
P
o
(W)
0
200
160
80
120
40
001aad866
20
10
30
40
P
(W)
0
(1)
(2)
TDF8590TH_2
© NXP B.V
. 2007. All rights reserved.
Product data sheet
Rev
. 02 — 23 April 2007
27 of 30
NXP Semiconductors
TDF8590TH
2
×
80 W SE (4
Ω
) or 1
×
160 W BTL (8
Ω
) class-D amplifier
13.
P
ac
kage outline
Fig 25.
P
acka
ge outline SOT566-3 (HSOP24)
UNIT
A
4
(1)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
03-02-18
03-07-23
IEC
JEDEC
JEITA
mm
+
0.08
−
0.04
3.5
0.35
DIMENSIONS (mm are the original dimensions)
Notes
1. Limits per individual lead.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT566-3
0
5
10 mm
scale
HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height
SOT566-3
A
max.
detail X
A
2
3.5
3.2
D
2
1.1
0.9
H
E
14.5
13.9
L
p
1.1
0.8
Q
1.7
1.5
2.7
2.2
v
0.25
w
0.25
yZ
8
°
0
°
θ
0.07
x
0.03
D
1
13.0
12.6
E
1
6.2
5.8
E
2
2.9
2.5
b
p
c
0.32
0.23
e
1
D
(2)
16.0
15.8
E
(2)
11.1
10.9
0.53
0.40
A
3
A
4
A
2
(A
3
)
L
p
θ
A
Q
D
y
x
H
E
E
c
v
M
A
X
A
b
p
w
M
Z
D
1
D
2
E
2
E
1
e
24
13
1
12
pin 1 index
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P30
TDF8590TH/N1TJ
Mfr. #:
Buy TDF8590TH/N1TJ
Manufacturer:
NXP Semiconductors
Description:
Audio Amplifiers 2 X 80 W SE (4 ) or 1 X 160 W BTL (8 ) class-D amplifier
Lifecycle:
New from this manufacturer.
Delivery:
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Products related to this Datasheet
TDF8590TH/N1TJ
TDF8590TH/N1,118
TDF8590TH/N1S,118