ADF4157 Data Sheet
Rev. D | Page 6 of 24
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
CP
CPGND
AGND
AV
DD
RF
IN
A
RF
IN
B
R
SET
DV
DD
MUXOUT
LE
CE
REF
IN
DGND
CLK
DATA
V
P
ADF4157
TOP VIEW
(Not to Scale)
05874-003
Figure 3. TSSOP Pin Configuration
0
5874-004
NOTES
1. IT IS RECOMMENDED THAT THE EXPOSED PAD
BE THERMALLY CONNECTED TO A COPPER
PLANE FOR ENHANCED THERMAL PERFORMANCE.
THIS PAD SHOULD BE CONNECTED TO AGND.
14
13
12
1
3
4
LE
15 MUXOUT
DATA
CLK
11
CE
CPGND
AGND
2
AGND
RF
IN
B
5
RF
IN
A
7
AV
DD
6
AV
DD
8
REF
IN
9
DGND
10
D
GND
19
R
SET
20
CP
18 V
P
17 DV
DD
16
D
V
DD
ADF4157
TOP VIEW
(Not to Scale)
Figure 4. LFCSP Pin Configuration
Table 5. Pin Function Descriptions
TSSOP
Pin No.
LFCSP
Pin No.
Mnemonic Description
1 19 R
SET
Connecting a resistor between this pin and ground sets the maximum charge pump output
current.
The relationship between I
CP
and R
SET
is
SET
CPMAX
R
I
5.25
where:
R
SET
= 5.1 kΩ.
I
CPMAX
= 5 mA.
2 20 CP
Charge Pump Output. When enabled, this pin provides ±I
CP
to the external loop filter, which, in
turn, drives the external VCO.
3 1 CPGND Charge Pump Ground. This is the ground return path for the charge pump.
4 2, 3 AGND Analog Ground. This is the ground return path of the prescaler.
5 4 RF
IN
B
Complementary Input to the RF Prescaler. This point should be decoupled to the ground plane
with a small bypass capacitor, typically 100 pF.
6 5 RF
IN
A Input to the RF Prescaler. This small-signal input is normally ac-coupled from the VCO.
7 6, 7 AV
DD
Positive Power Supply for the RF Section. Decoupling capacitors to the digital ground plane
should be placed as close as possible to this pin. AV
DD
has a value of 3 V ± 10%. AV
DD
must have
the same voltage as DV
DD
.
8 8 REF
IN
Reference Input. This is a CMOS input with a nominal threshold of V
DD
/2 and an equivalent
input resistance of 100 kΩ. This input can be driven from a TTL or CMOS crystal oscillator, or it
can be ac-coupled.
9 9, 10 DGND Digital Ground.
10 11 CE
Chip Enable. A logic low on this pin powers down the device and puts the charge pump output
into three-state mode.
11 12 CLK
Serial Clock Input. This serial clock is used to clock in the serial data to the registers. The data is
latched into the input shift register on the CLK rising edge. This input is a high impedance
CMOS input.
12 13 DATA
Serial Data Input. The serial data is loaded MSB first with the three LSBs being the control bits.
This input is a high impedance CMOS input.
13 14 LE
Load Enable, CMOS Input. When LE is high, the data stored in the input shift register is loaded
into one of the five latches, with the latch selected using the control bits.
14 15 MUXOUT
This multiplexer output allows the lock detect, the scaled RF, or the scaled reference frequency
to be accessed externally.
Data Sheet ADF4157
Rev. D | Page 7 of 24
TSSOP
Pin No.
LFCSP
Pin No. Mnemonic Description
15 16, 17 DV
DD
Positive Power Supply for the Digital Section. Decoupling capacitors to the digital ground
plane should be placed as close as possible to this pin. DV
DD
has a value of 3 V ± 10%. DV
DD
must have the same voltage as AV
DD
.
16 18 V
P
Charge Pump Power Supply. This should be greater than or equal to V
DD
. In systems where V
DD
is 3 V, it can be set to 5.5 V and used to drive a VCO with a tuning range of up to 5.5 V.
N/A 21 (EPAD) Exposed Pad
(EPAD)
It is recommended that the exposed pad be thermally connected to a copper plane for
enhanced thermal performance. The pad should be connected to AGND.
ADF4157 Data Sheet
Rev. D | Page 8 of 24
TYPICAL PERFORMANCE CHARACTERISTICS
PFD = 25 MHz, loop bandwidth = 20 kHz, reference = 100 MHz, I
CP
= 313 μA, phase noise measurements taken on the Agilent E5052A
phase noise system.
10
–40
0 9
FREQUENCY (GHz)
POWER (dBm)
5
0
–5
–10
–15
–20
–25
–30
–35
1 2 3 4 5 6 7 8
P = 4/5
P = 8/9
05874-016
Figure 5. RF Input Sensitivity
0
–40
0 500
FREQUENCY (MHz)
POWER (dBm)
–5
–10
–15
–20
–25
–30
–35
100 200 300 400
V
DD
= 3V
05874-017
Figure 6. Reference Input Sensitivity
0
–160
1k 10M
FREQUENCY (Hz)
PHASE NOISE (dBc/Hz)
–20
–40
–60
–80
–100
–120
–140
10k 100k 1M
RF = 5800.25MHz, PFD = 25MHz, N = 232,
FRAC = 335544, FREQUENCY RESOLUTION = 0.74Hz,
20kHz LOOP BW, I
CP
= 313µA, DSB INTEGRATED PHASE
ERROR = 0.97° RMS, PHASE NOISE @ 2kHz = –87dBc/Hz.
05874-018
Figure 7. Phase Noise and Spurs
(Note that the 250 kHz spur is an integer boundary spur; see the Spur
Mechanisms section for more information.)
6.00
5.65
–100 900
TIME (µs)
FREQUENCY (GHz)
5.95
5.90
5.85
5.80
5.75
5.70
0 100 200 300 400 500 600 700 800
CSR OFF
CSR ON
05874-019
Figure 8. Lock Time for 200 MHz Jump from 5705 MHz to 5905 MHz
with CSR On and Off
5.65
5.60
5.95
5.90
5.85
5.80
5.75
5.70
–100 900
T
IME (µs)
FREQUENCY (GHz)
0 100 200 300 400 500 600 700 800
CSR ON
CSR OFF
05874-020
Figure 9. Lock Time for 200 MHz Jump from 5905 MHz to 5705 MHz
with CSR On and Off
6
–6
0 5.0
05874-021
V
CP
(V)
I
CP
(mA)
4
2
0
–2
–4
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Figure 10. Charge Pump Output Characteristics, Pump Up and Pump Down

EV-ADF4157SD1Z

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
ADF4157 Clock Generator and Synthesizer Evaluation Board
Lifecycle:
New from this manufacturer.
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