IR2132
B-168 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
Parameter Value
Symbol Definition Figure Min. Typ. Max. Units Test Conditions
I
O+
Output High Short Circuit Pulsed Current 38 200 250 V
O
= 0V, V
IN
= 0V
PW10 µs
I
O-
Output Low Short Circuit Pulsed Current 39 420 500 V
O
= 15V, V
IN
= 5V
PW10 µs
V
OS
Operational Amplifer Input Offset Voltage 40 30 mV V
S0
= V
CA-
= 0.2V
I
CA-
CA- Input Bais Current 41 4.0 nA V
CA-
= 2.5V
CMRR Op. Amp. Common Mode Rejection Ratio 42 60 80 V
S0
=V
CA-
=0.1V & 5V
PSRR Op. Amp. Power Supply Rejection Ratio 43 55 75 V
S0
= V
CA-
= 0.2V
V
CC
= 10V & 20V
V
OH,AMP
Op. Amp. High Level Output Voltage 44 5.0 5.2 5.4 V V
CA-
= 0V, V
S0
= 1V
V
OL,AMP
Op. Amp. Low Level Output Voltage 45 20 mV V
CA-
= 1V, V
S0
= 0V
I
SRC,AMP
Op. Amp. Output Source Current 46 2.3 4.0 V
CA-
= 0V, V
S0
= 1V
V
CAO
= 4V
I
SRC,AMP
Op. Amp. Output Sink Current 47 1.0 2.1 V
CA-
= 1V, V
S0
= 0V
V
CAO
= 2V
I
O+,AMP
Operational Amplifier Output High Short 48 4.5 6.5 V
CA-
= 0V, V
S0
= 5V
Circuit Current V
CAO
= 0V
I
O-,AMP
Operational Amplifier Output Low Short 49 3.2 5.2 V
CA-
= 5V, V
S0
= 0V
Circuit Current V
CAO
= 5V
Static Electrical Characteristics -- Continued
V
BIAS
(V
CC
, V
BS1,2,3
) = 15V, V
S0,1,2,3
= V
SS
and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters
are referenced to V
SS
and are applicable to all six logic input leads:
HIN1,2,3
&
LIN1,2,3
. The V
O
and I
O
parameters
are referenced to V
S0,1,2,3
and are applicable to the respective output leads: HO1,2,3 or LO1,2,3.
mA
dB
mA
Lead Assignments
28 Lead DIP 44 Lead PLCC w/o 12 Leads 28 Lead SOIC (Wide Body)
IR2132 IR2132J IR2132S
Part Number
IR2132
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-169
Lead
Symbol Description
Logic inputs for high side gate driver outputs (HO1,2,3), out of phase
Logic inputs for low side gate driver output (LO1,2,3), out of phase
Indicates over-current or undervoltage lockout (low side) has occurred, negative logic
V
CC
Low side and logic fixed supply
ITRIP Input for over-current shutdown
CAO Output of current amplifier
CA- Negative input of current amplifier
V
SS
Logic ground
V
B1,2,3
High side floating supplies
HO1,2,3 High side gate drive outputs
V
S1,2,3
High side floating supply returns
LO1,2,3 Low side gate drive outputs
V
S0
Low side return and positive input of current amplifier
Functional Block Diagram
Lead Definitions
LIN1,2,3
HIN1,2,3
FAULT
IR2132
B-170 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
Thickness of Gate Oxide 800Å
Connections Material Poly Silicon
First Width 4 µm
Layer Spacing 6 µm
Thickness 5000Å
Material Al - Si (Si: 1.0% ±0.1%)
Second Width 6 µm
Layer Spacing 9 µm
Thickness 20,000Å
Contact Hole Dimension 8 µm X 8 µm
Insulation Layer Material PSG (SiO
2
)
Thickness 1.5 µm
Passivation Material PSG (SiO
2
)
(1) Thickness 1.5 µm
Passivation Material Proprietary*
(2) Thickness Proprietary*
Method of Saw Full Cut
Method of Die Bond Ablebond 84 - 1
Wire Bond Method Thermo Sonic
Material Au (1.0 mil / 1.3 mil)
Leadframe Material Cu
Die Area Ag
Lead Plating Pb : Sn (37 : 63)
Package Types 28 Lead PDIP & SOIC / 44 Lead PLCC
Materials EME6300 / MP150 / MP190
Remarks: * Patent Pending
Device Information
Process & Design Rule HVDCMOS 4.0 µm
Transistor Count 700
Die Size 126 X 175 X 26 (mil)
Die Outline

IR2132JTR

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC DRIVER BRIDGE 3-PHASE 44-PLCC
Lifecycle:
New from this manufacturer.
Delivery:
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