NCP81239, NCP81239A
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7
Table 3. ELECTRICAL CHARACTERISTICS
(V1 = 12 V, V
out
= 1.0 V , T
A
= +25°C for typical value; −40°C < T
A
< 100°C for min/max values unless noted otherwise)
Parameter UnitsMaxTypMinTest ConditionsSymbol
Interrupt Propagation Delay
PGI Delay for power good in 3.3 ms
PGO Delay for power good out 100 ns
Power Good Threshold
PGTH Power Good in from high 105 %
PGTH Power Good in from low 95 %
PGTHYS PG falling hysteresis 2.5 %
FB Overvoltage Threshold FB_OV 120 %
Overvoltage Propagation Delay VFB_OVDL 1
Cycle
External Current Sense (CS1,CS2)
Positive Current Measurement High
CS10 CSP1−CSN1 or CSP2−CSN2 =
100 mV
500
mA
Transconductance Gain Factor CSGT Current Sense Transconductance
Vsense = 1 mV to 100 mV
5 mS
Transconductance Deviation CSGE −20 20 %
Current Sense Common Mode
Range
CSCMMR 3 28 V
−3dB Small Signal Bandwidth CSBW VSENSE (AC) = 10 mVPP,
RGAIN = 10 kW (Note 4)
30 MHz
Input Sense Voltage Full Scale ISVFS 100 mV
CS Output Voltage Range CSOR VSENSE = 100 mV Rset = 6k 0 3 V
External Current Limit (CLIND)
Current Limit Indicator Output Low
CLINDL
Input current = 500 mA
5.6 100 mV
Current Limit Indicator Output High CLINDH
Input current = 500 mA
4.0 5.0 V
Internal Current Sense
Internal Current Sense Gain for PWM
ICG CSPx−CSNx = 100 mV 9.2 9.8 10.5 V/V
Positive Peak Current Limit Trip PPCLT INT_CL = 00 34 39 44 mV
Negative Valley Current Limit Trip NVCLT INT_CL_NEG = 00 31 40 45 mV
Switching MOSFET Drivers
HSG1 HSG2 Pullup Resistance
HSG_PU BST−VSW = 4.5 V 2.8
W
HSG1 HSG2 Pulldown Resistance HSG_PD BST−VSW = 4.5 V 1.2
W
LSG1 LSG2 Pullup Resistance LSG_PU LSG −PGND = 2.5 V 3.3
W
LSG1 LSG2 Pulldown Resistance LSG_PD LSG −PGND = 2.5 V 0.9
W
HSG Falling to LSG Rising Delay HSLSD 15 ns
LSG Falling to HSG Rising Delay LSHSD 15 ns
4. Ensured by design. Not production tested.
