Electrical Specifications
MR2A16A Data Sheet, Rev. 6
Freescale Semiconductor
5
Table 4. Operating Conditions
Parameter Symbol Min Typ Max Unit
Power supply voltage
MR2A16ATS35C (Commercial - Legacy)
MR2A16AYS35 (Commercial - New)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
V
DD
3.0
1
3.0
2
3.0
2
3.0
2
3.3
3.3
3.3
3.3
3.6
3.6
3.6
3.6
V
Write inhibit voltage
MR2A16ATS35C (Commercial - Legacy)
MR2A16AYS35 (Commercial - New)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
V
WI
2.5
2.5
2.5
2.5
2.7
2.7
2.7
2.7
3.0
1
3.0
2
3.0
2
3.0
2
V
Input high voltage V
IH
2.2 —
V
DD
+
0.3
3
V
Input low voltage V
IL
–0.5
4
—0.8V
Operating temperature
MR2A16ATS35C (Commercial - Legacy)
MR2A16AYS35 (Commercial - New)
MR2A16ACYS35 (Industrial)
MR2A16AVYS35 (Extended)
T
A
0
0
-40
-40
70
70
85
105
°C
NOTES:
1
After power up or if V
DD
falls below V
WI
, a waiting period of 2 μs must be observed, and E and W
must remain high for 2 μs. Memory is designed to prevent writing for all input pin conditions if V
DD
falls below minimum V
WI
.
2
After power up or if V
DD
falls below V
WI
, a waiting period of 2 ms must be observed, and E and W
must remain high for 2 ms. Memory is designed to prevent writing for all input pin conditions if V
DD
falls below minimum V
WI
.
3
V
IH
(max) = V
DD
+ 0.3 Vdc; V
IH
(max) = V
DD
+ 2.0 Vac (pulse width ≤ 10 ns) for I ≤ 20.0 mA.
4
V
IL
(min) = –0.5 Vdc; V
IL
(min) = –2.0 Vac (pulse width ≤ 10 ns) for I ≤ 20.0 mA.
