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BTS640S2GATMA1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
Smart Sense High-Side
Power Switch
Features
•
Short circuit protection
•
Current limitation
•
Proportional load current sense
•
CMOS compatible input
•
Open drain diagnostic output
•
Fast demagnetization of inductive loads
•
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
•
Overload protection
•
Thermal shutdown
•
Overvoltage protection including load dump (with
external GND-resistor)
•
Reverse battery protection (with external GND-resistor)
•
Loss of ground and loss of
V
bb
protection
•
Electrostatic discharge (ESD) protection
Application
•
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS
technology.
Providing embedded protective functions.
Block Diagram
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Product Summary
Operating voltage
V
bb(on)
5.0 ... 34 V
On-state resistance R
ON
30
mΩ
Load current (ISO) I
L(ISO)
12.6 A
Current limitation I
L(SCr)
24 A
Package
TO220-7-11 TO263-7-2 TO220-7-12
1 1 1
Standard (staggered) SMD Straight
• AEC qualified
• Green product (RoHS compliant)
Data Sheet 1 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
Pin Symbol Function
1 ST
Diagnostic feedback: open drain, invers to input level
2 GND Logic ground
3 IN Input, activates the power switch in case of logical high signal
4 V
bb
Positive power supply voltage, the tab is shorted to this pin
5 IS
Sense current output, proportional to the load current, zero in
the case of current limitation of load current
6 & 7 OUT
(Load, L)
Output, protected high-side power output to the load.
Both output pins have to be connected in parallel for operation
according this spec (e.g. k
ILIS
).
Design the wiring for the max. short circuit current
Maximum Ratings at
T
j = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4)
V
bb
43 V
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150°C
V
bb
34 V
Load dump protection
1)
V
LoadDump
= V
A
+ V
s
, V
A
= 13.5V
R
I
2)
= 2 Ω,
R
L
= 1 Ω,
t
d
= 200 ms, IN= low or high
V
Load dump
3
)
60 V
Load current (Short circuit current, see page 5)
I
L
self-limited A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC), T
C
≤ 25 °C
P
tot
85 W
Inductive load switch-off energy dissipation, single pulse
V
bb
= 12V,
T
j,start
= 150°C,
T
C
= 150°C const.
I
L
= 12.6 A, Z
L
= 4,2 mH, 0 Ω:
I
L
= 4 A, Z
L
= 330 mH, 0 Ω:
E
AS
E
AS
0,41
3,5
J
Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST, IS:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
V
ESD
1.0
4.0
8.0
kV
Input voltage (DC)
V
IN
-10 ... +16 V
Current through input pin (DC)
Current through status pin (DC)
Current through current sense pin (DC)
see internal circuit diagrams page 8
I
IN
I
ST
I
IS
±2.0
±5.0
±14
mA
1)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150 Ω
resistor in the GND connection is recommended).
2)
R
I
= internal resistance of the load dump test pulse generator
3)
V
Load dump
is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839
Data Sheet 2 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case:
R
thJC
-- -- 1.47
K/W
junction - ambient (free air):
R
thJA
-- -- 75
SMD version, device on PCB
4)
: -- 33 --
4)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at
T
j = 25 °C,
V
bb
= 12 V unless otherwise specified
min typ max
Load Switching Capabilities and Characteristics
On-state resistance
(pin 4 to 6&7)
I
L
= 5 A
T
j
=25 °C:
T
j
=150 °C:
R
ON
-- 27
54
30
60
mΩ
Output voltage drop limitation at small load
currents
(pin 4 to 6&7), see page 14
I
L
= 0.5 A
T
j
=-40...+150°C:
V
ON(NL)
-- 50 -- mV
Nominal load current, ISO Norm (pin 4 to 6&7)
V
ON
= 0.5 V,
T
C
= 85 °C
I
L(ISO)
11.4 12.6 -- A
Nominal load current, device on PCB
4)
T
A
= 85 °C,
T
j
≤ 150 °C
V
ON
≤ 0.5 V,
I
L(NOM)
4.0 4.5 -- A
Output current (pin 6&7) while GND disconnected
or GND pulled up,
V
bb
=30 V,
V
IN
= 0, see diagram page
9; not subject to production test, specified by design
I
L(GNDhigh)
-- -- 8 mA
Turn-on time IN to 90%
V
OUT
:
Turn-off time IN to 10%
V
OUT
:
R
L
= 12 Ω,
T
j
=-40...+150°C
t
on
t
off
25
25
70
80
150
200
µs
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12 Ω,
T
j
=-40...+150°C
d
V
/dt
on
0.1 -- 1 V/µs
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12 Ω,
T
j
=-40...+150°C
-d
V
/dt
off
0.1 -- 1 V/µs
Data Sheet 3 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

BTS640S2GATMA1

Mfr. #:
Buy BTS640S2GATMA1
Manufacturer:
Infineon Technologies
Description:
Power Switch ICs - Power Distribution SMART SENSE HI-SIDE PWR SWITCH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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