Truth Table
Input Output Status Current
Sense
level level level I
IS
Normal
operation
L
H
L
H
H
L
0
nominal
Current-
limitation
L
H
L
H
H
H
0
0
Short circuit to
GND
L
H
L
L
16
)
H
H
0
0
Over-
temperature
L
H
L
L
H
H
0
0
Short circuit to
V
bb
L
H
H
H
L
17)
L
0
<nominal
18)
Open load L
H
L
19
)
H
H (L
20)
)
L
0
0
Undervoltage L
H
L
L
H
L
0
0
Overvoltage L
H
L
L
H
L
0
0
Negative output
voltage clamp
L L H 0
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
16)
The voltage drop over the power transistor is
V
bb
-
V
OUT
>typ.3V. Under this condition the sense current
I
IS
is
zero
17)
An external short of output to V
bb
, in the off state, causes an internal current from output to ground. If R
GND
is used, an offset voltage at the GND and ST pins will occur and the V
ST low
signal may be errorious.
18)
Low ohmic short to
V
bb
may reduce the output current
I
L
and therefore also the sense current
I
IS
.
19)
Power Transistor off, high impedance
20)
with external resistor between pin 4 and pin 6&7
Data Sheet 7 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
Terms
352)(7
9
,6
67
287
*1'
EE
9
67
9
,1
,
67
,
,1
9
EE
,
EE
,
*1'
,1
9
,6
,
,6
9
287
9
21
,
/
287
5
*1'
Input circuit (ESD protection)
,1
*1'
,
5
(6'='
,
,
,
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
S
tatus output
67
*1'
(6'
='
9
5
6721
ESD-Zener diode: 6.1 V typ., max 5 mA;
R
ST(ON)
< 440 at 1.6 mA,
The use of ESD zener
diodes as voltage clamp at DC conditions is not
recommended.
Current sense output
,6
*1'
,6
5
,6
,
(6'='
,6
9
ESD-Zener diode: 6.1 V typ., max 14 mA;
R
IS
= 1 k nominal
Inductive and overvoltage output clamp
9
EE
287
*1'
352)(7
9
=
9
21
V
ON
clamped to 47 V typ.
Data Sheet 8 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
Overvoltage protection of logic part
9
EE
,6
67
5
*1'
*1'
5
6LJQDO*1'
/RJLF
9
=
,1
5
,
9
=
67
,6
5
9
9
5
V
Z1
= 6.1 V typ.,
V
Z2
= 47 V typ.,
R
I
= 4 k typ,
R
GND
= 150 Ω,
R
ST
= 15 k,
R
IS
= 1 k,
R
V
= 15 k,
Reverse battery protection
*1'
/RJLF
,6
67
5
,1
67
,6
5
9
9
5
287
/
5
3RZHU*1'
*1'
5
6LJQDO*1'
3RZHU
,QYHUVH
,
5
9
EE
'LRGH
=
9
The load
R
L
is inverse on, temperature protection is
not active
R
GND
= 150 Ω,
R
I
= 4 k typ,
R
ST
500 ,
R
IS
200 ,
R
V
500 ,
Open-load detection
OFF-state diagnostic condition:
V
OUT
> 3 V typ.; IN low
/RJLF
67
2XW
9
287
6LJQDO*1'
5
(;7
5
2
2))
9
EE
GND disconnect
352)(7
9
67
,6
287
*1'
EE
9
EE
,
EE
,1
287
9
,1
9
67
9
,6
9
*1'
Any kind of load. In case of Input=high is
V
OUT
V
IN
-
V
IN(T+)
.
Due to V
GND
>0, no V
ST
= low signal available.
GND disconnect with GND pull up
352)(7
9
67
,6
287
*1'
EE
9
EE
,1
287
9
,1
9
67
9
,6
9
*1'
Any kind of load. If V
GND
>
V
IN
-
V
IN(T+)
device stays off
Due to V
GND
>0, no V
ST
= low signal available.
V
bb
disconnect with energized inductive
load
352)(7
9
67
,6
287
*1'
EE
9
EE
,1
287
KLJK
Normal load current can be handled by the PROFET
itself.
Data Sheet 9 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G

BTS640S2GATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Power Switch ICs - Power Distribution SMART SENSE HI-SIDE PWR SWITCH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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