Parameter and Conditions Symbol Values Unit
a
t
T
j = 25 °C,
V
bb
= 12 V unless otherwise specified
min typ max
Operating Parameters
Operating voltage
5)
T
j
=-40...+150°C:
V
bb(on)
5.0 -- 34 V
Undervoltage shutdown
T
j
=-40...+150°C:
V
bb(under)
3.2 -- 5.0 V
Undervoltage restart
T
j
=-40...+25°C:
T
j
=+150°C:
V
bb(u rst)
-- 4.5 5.5
6.0
V
Undervoltage restart of charge pump
see diagram page 13
T
j
=-40...+25°C:
T
j
=25...150°C:
V
bb(ucp)
--
--
4.7
--
6.5
7.0
V
Undervoltage hysteresis
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
V
bb(under)
-- 0.5 -- V
Overvoltage shutdown
T
j
=-40...+150°C:
V
bb(over)
34 -- 43 V
Overvoltage restart
T
j
=-40...+150°C:
V
bb(o rst)
33 -- -- V
Overvoltage hysteresis
T
j
=-40...+150°C:
V
bb(over)
-- 1 -- V
Overvoltage protection
6)
T
j
=-40°C:
I
bb
=40 mA
T
j
=+25...+150°C
V
bb(AZ)
41
43
--
47
--
52
V
Standby current (pin 4)
V
IN
=0
T
j
=-40...+25°C:
T
j
= 150°C:
I
bb(off)
--
--
4
12
15
25
µA
Off state output current (included in
I
bb(off)
)
V
IN=0
,
T
j
=-40...+150°C
:
I
L(off)
-- -- 10 µA
Operating current (Pin 2)
7)
,
V
IN
=5 V
I
GND
-- 1.2 3 mA
5
)
At supply voltage increase up to
V
bb
= 4.7 V typ without charge pump,
V
OUT
V
bb
- 2 V
6
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150
resistor in the GND connection is recommended). See also
V
ON(CL)
in table of protection functions and
circuit diagram page 9.
7
)
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
Data Sheet 4 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
Parameter and Conditions Symbol Values Unit
at
T
j = 25 °C,
V
bb
= 12 V unless otherwise specified
min typ max
Protection Functions
8)
Initial peak short circuit current limit
(pin 4 to 6&7)
I
L(SCp)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
48
40
31
56
50
37
65
58
45
A
Repetitive short circuit shutdown current limit
I
L(SCr)
T
j
=
T
jt
(see timing diagrams, page 12)
-- 24 -- A
Output clamp
(inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
;
I
L
= 40 mA,
T
j
=-40°C:
T
j
=+25..+150°C:
V
ON(CL)
41
43
--
47
--
52
V
Thermal overload trip temperature
T
jt
150 -- -- °C
Thermal hysteresis
T
jt
-- 10 -- K
Reverse battery
(pin 4 to 2)
9
)
-
V
bb
-- -- 32 V
Reverse battery voltage drop
(V
out
> V
bb
)
I
L
= -5 A
T
j
=150 °C:
-V
ON(rev)
-- 600 -- mV
Diagnostic Characteristics
Current sense ratio
10)
, static on-condition,
V
IS
= 0...5 V,
V
bb(on)
= 6.5
11)
...27V,
k
ILIS
=
I
L
/
I
IS
T
j
= -40°C,
I
L
= 5 A:
k
ILIS
4550 5000 6000
T
j
= -40°C,
I
L
= 0.5 A: 3300 5000 8000
T
j
= 25...+150°C,
I
L
= 5 A:
,
T
j
= 25...+150°C,
I
L
= 0.5 A:
4550
4000
5000
5000
5550
6500
Current sense output voltage limitation
T
j
= -40 ...+150°C
I
IS
= 0,
I
L
= 5 A:
V
IS(lim)
5.4 6.1 6.9 V
Current sense leakage/offset current
T
j
= -40 ...+150°C
V
IN
=0,
V
IS
= 0,
I
L
= 0:
I
IS(LL)
0--1
µA
V
IN
=5 V,
V
IS
= 0,
I
L
= 0:
I
IS(LH)
0 -- 15
V
IN
=5 V,
V
IS
= 0,
V
OUT
= 0
(short circuit):
I
IS(SH)
12 )
0 -- 10
8)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
9)
Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 9).
10)
This range for the current sense ratio refers to all devices. The accuracy of the
k
ILIS
can be raised at least by
a factor of two by matching the value of
k
ILIS
for every single device.
In the case of current limitation the sense current
I
IS
is zero and the diagnostic feedback potential
V
ST
is
High. See figure 2b, page 11.
11)
Valid if
V
bb(u rst)
was exceeded before.
12)
not subject to production test, specified by design
Data Sheet 5 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
BTS
640
S2
P
arameter and Conditions Symbol Values Unit
a
t
T
j = 25 °C,
V
bb
= 12 V unless otherwise specified
min typ max
C
urrent sense settling time to
I
IS static
±10% after
positive input slope
13)
,
I
L
= 0
5 A,
T
j
= -40...+150°C
t
son(IS)
-- -- 300
µs
C
urrent sense settling time to 10% of
I
IS
static after
negative input slope
13)
,
I
L
= 5
0 A ,
T
j
= -40...+150°C
t
soff(IS)
-- 30 100
µs
C
urrent sense rise time (60% to 90%) after change
of load current
13)
,
I
L
= 2.5
5 A
t
slc(IS)
-- 10 --
µs
O
pen load detection voltage
14)
(off-condition)
T
j
=-40..150°C:
V
OUT(OL)
2 3 4 V
Internal output pull down
(pin 6 to 2),
V
OUT
=5 V,
T
j
=-40..150°C
R
O
5 15 40 k
I
nput and Status Feedback
15)
Input resistance
see circuit page 8
R
I
3,0 4,5 7,0 k
Input turn-on threshold voltage
T
j
=-40..+150
°C:
V
IN(T+)
-- -- 3.5 V
Input turn-off threshold voltage
T
j
=-40..+150
°C:
V
IN(T-)
1.5 -- -- V
Input threshold hysteresis
V
IN(T)
-- 0.5 -- V
O
ff state input current (pin 3),
V
IN
= 0.4 V
T
j
=-40..+150°C
I
IN(off)
1 -- 50 µA
O
n state input current (pin 3),
V
IN
= 5 V
T
j
=-40..+150°C
I
IN(on)
20 50 90 µA
Delay time for status with open load
after Input neg. slope (see diagram page 13)
t
d(ST OL3)
-- 400 -- µs
S
tatus delay after positive input slope
13)
T
j
=-40 ... +150°C:
t
don(ST)
-- 13 --
µs
S
tatus delay after negative input slope
13)
T
j
=-40 ... +150°C:
t
doff(ST)
-- 1 --
µs
S
tatus output (open drain)
Zener limit voltage
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
ST low voltage
T
j
=-40...+25°C,
I
ST
= +1.6 mA:
T
j
= +150°C,
I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.4
--
--
6.1
--
--
6.9
0.4
0.7
V
S
tatus leakage current,
V
ST
= 5 V,
T
j
=25 ... +150°C:
I
ST(high)
-- -- 2 µA
1
3)
not subject to production test, specified by design
1
4)
External pull up resistor required for open load detection in off state.
1
5)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
Data Sheet 6 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G

BTS640S2GATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Power Switch ICs - Power Distribution SMART SENSE HI-SIDE PWR SWITCH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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