Operation M41T315Y, M41T315V, M41T315W
10/30
2 Operation
Figure 6 on page 11 illustrates the main elements of the device. The following paragraphs
describe the signals and functions.
Communication with the clock is established by pattern recognition of a serial bit stream of
64 bits which must be matched by executing 64 consecutive WRITE cycles containing the
proper data on data in (D). All accesses which occur prior to recognition of the 64-bit pattern
are directed to memory via the chip enable output pin (CEO
).
After recognition is established, the next 64 READ or WRITE Cycles either extract or update
data in the clock and CEO
remains high during this time, disabling the connected memory
(see Table 2 on page 11).
Data transfer to and from the timekeeping function is accomplished with a serial bit stream
under control of chip enable input (CEI
), output enable (OE), and WRITE enable (WE).
Initially, a READ cycle using the CEI
and OE control of the clock starts the pattern
recognition sequence by moving the pointer to the first bit of the 64-bit comparison register.
Next, 64 consecutive WRITE cycles are executed using the CEI
and WE control of the clock.
These 64 WRITE cycles are used only to gain access to the clock.
When the first WRITE cycle is executed, it is compared to the first bit of the 64-bit
comparison register. If a match is found, the pointer increments to the next location of the
comparison register and awaits the next WRITE cycle.
If a match is not found, the pointer does not advance and all subsequent WRITE cycles are
ignored. If a READ cycle occurs at any time during pattern recognition, the present
sequence is aborted and the comparison register pointer is reset. Pattern recognition
continues for a total of 64 WRITE cycles as described above until all the bits in the
comparison register have been matched (see Figure 8 on page 14).
With a correct match for 64 bits, access to the registers is enabled and data transfer to or
from the timekeeping registers may proceed. The next 64 cycles will cause the device to
either receive data on D, or transmit data on Q, depending on the level of OE
pin or the WE
pin. Cycles to other locations outside the memory block can be interleaved with CEI
cycles
without interrupting the pattern recognition sequence or data transfer sequence to the
device.
For a SO16 pin package, a standard 32.768 kHz quartz crystal can be directly connected to
the M41T315Y/V/W via pins 1 and 2 (XI, XO). The crystal selected for use should have a
specified load capacitance (C
L
) of 12.5 pF (see Table 10 on page 21).
M41T315Y, M41T315V, M41T315W Operation
11/30
2.1 Non-volatile supervisor operation
A switch is provided to direct power from the battery input or V
CCI
to V
CCO
with a maximum
voltage drop of 0.3 Volts. The V
CCO
output pin is used to supply uninterrupted power to
CMOS SRAM. The M41T315Y/V/W safeguards the clock and RAM data by power-fail
detection and write protection.
Power-fail detection occurs when V
CCI
falls below V
PFD
which is set by an internal bandgap
reference. The M41T315Y/V/W constantly monitors the V
CCI
supply pin. When V
CCI
is less
than V
PFD
, power-fail circuitry forces the chip enable output (CEO) to V
CCI
or V
BAT
-0.2 volts
for external RAM write protection. During nominal supply conditions, CEO
will track CEI with
a propagation delay. Internally, the M41T315Y/V/W aborts any data transfer in progress
without changing any of the device registers and prevents future access until V
CCI
exceeds
V
PFD
. Figure 5 on page 9 illustrates a typical RAM/clock interface.
Figure 6. Read mode waveforms
Table 2. Operating modes
Mode V
CC
CEI OE WE DQ Power
Deselect
4.5 to 5.5V
or
3.0 to 3.6V
or
2.7 to 3.3V
V
IH
X X Hi-Z Hi-Z Standby
WRITE V
IL
XV
IL
D
IN
Hi-Z Active
READ V
IL
V
IL
V
IH
Hi-Z D
OUT
Active
READ V
IL
V
IH
V
IH
Hi-Z Hi-Z Active
Deselect V
SO
to V
PFD
(min)
(1)
X X X Hi-Z Hi-Z CMOS standby
Deselect V
SO
(1)
X X X Hi-Z Hi-Z Battery back-up mode
1. See Table 11 on page 21 for details.
DATA OUTPUT VALID
WE
CEI
OE
Q
tCW
tCO
tRC
tOW
tCOE
tODO
tRR
tOD
tOE
tOEE
AI04259
Operation M41T315Y, M41T315V, M41T315W
12/30
Figure 7. Write mode waveforms
DATA INPUT STABLE
OE
D
CEI
tWP
tWC
tCW
tDH
tWR
tWR
WE
t
DH
tDS
AI04261
Table 3. AC electrical characteristics (M41T315Y)
Symbol Parameter
(1)
Min Typ Max Units
t
AVAV
t
RC
READ cycle time 65 ns
t
ELQV
t
CO
CEI access time 55 ns
t
GLQV
t
OE
OE access time 55 ns
t
ELQX
t
COE
CEI to output low Z 5 ns
t
GLQX
t
OEE
OE to output low Z 5 ns
t
EHQZ
t
OD
CEI to output high Z 25 ns
t
GHQZ
t
ODO
OE to output high Z 25 ns
t
RR
READ recovery 10 ns
t
ELEH
t
CW
CEI pulse width 55 ns
t
GLGH
t
OW
OE pulse width 55 ns
t
AVAV
t
WC
WRITE cycle 65 ns
t
WLWH
t
WP
WRITE pulse width 55 ns
t
EHAX
t
WHAX
t
WR
(2)
WRITE recovery 10 ns
t
DVEH
t
DVWH
t
DS
(3)
Data setup 30 ns
t
EHDX
t
WHDX
t
DH
(3)
Data hold time 0 ns
t
RST
RST pulse width 65 ns
1. Valid for ambient operating temperature: TA = –40 to 85°C; VCC = 4.5 to 5.5V (except where noted).
2. t
WR
is a function of the latter occurring edge of WE or CEI.
3. t
DH
and t
DS
are functions of the first occurring edge of WE or CEI in RAM mode.

M41T315V-85MH6E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Real Time Clock Serial Access 85ns
Lifecycle:
New from this manufacturer.
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