M41T315Y, M41T315V, M41T315W DC and AC parameters
19/30
5 DC and AC parameters
This section summarizes the operating and measurement conditions, as well as the DC and
AC characteristics of the device. The parameters in the following DC and AC Characteristic
tables are derived from tests performed under the Measurement Conditions listed in the
relevant tables. Designers should check that the operating conditions in their projects match
the measurement conditions when using the quoted parameters.
Figure 10. AC testing load circuit
Note: 50pF for M41T315V.
Table 7. DC and AC measurement conditions
Parameter M41T315Y M41T315V/W
V
CC
supply voltage 4.5 to 5.5V 2.7 to 3.6V
Ambient operating temperature –40 to +85°
C 40 to +85°C
Load capacitance (C
L
) 100pF 50pF
Input rise and fall times 5ns 5ns
Input pulse voltages 0 to 3V 0 to 3V
Input and output timing ref. voltages 1.5V 1.5V
AI04255
C
L
C
L
includes JIG capacitance
400
DEVICE
UNDER
TEST
2.0V
Table 8. Capacitance
Symbol Parameter
(1)(2)
1. Effective capacitance measured with power supply at 5V; sampled only; not 100% tested.
2. At 25°C, f = 1MHz.
Min Max Unit
C
IN
Input capacitance 10 pF
C
IO
(3)
3. Outputs were deselected.
Input/output capacitance 10 pF
DC and AC parameters M41T315Y, M41T315V, M41T315W
20/30
Table 9. DC characteristics
Sym Parameter Test condition
(1)
M41T315Y M41T315V/W
Unit–65 –85
Min Typ Max Min Typ Max
I
IL
(2)
Input leakage
current
0V
V
IN
V
CC
±1 ±A
I
OL
Output leakage
current
0V
V
OUT
V
CC
±1 ±A
I
CC1
(3)
Supply current 10 6 mA
I
CCO1
(4)
V
CC
power supply
current
V
CC0
= V
CC1
0.3 150 100 mA
I
CC2
(3)
Supply current
(TTL standby)
CEI
= V
IH
32mA
I
CC3
(3)
V
CC
power supply
current
CEI
= V
CC1
– 0.2 1 1 mA
V
IL
(5)
Input low voltage –0.3 0.8 –0.3 0.6 V
V
IH
(5)
Input high voltage 2.2 V
CC1
+ 0.3 2.0
V
CC
+
0.3
V
V
OL
(6)
Output low voltage I
OL
= 4.0 mA 0.4 0.4 V
V
OH
(6)
Output high
voltage
I
OH
= –1.0 mA 2.4 2.4 V
V
PFD
Power fail
deselect
4.25 4.50
2.80 (V)
2.60 (W)
2.97 (V)
2.70 (W)
V
V
SO
Battery back-up
switchover
V
BAT
2.5 V
V
BAT
Battery voltage 2.5 3.7 2.5 3.7 V
V
CEO
CEO output
voltage
V
CC1
0.2
or
V
BAT
0.2
V
CC1
0.2
or
V
BAT
0.2
V
I
BAT
(3)
Battery current
V
BAT
= 3.0V
T
A
= 25°C
V
CC
= 0V
0.5 0.5 µA
I
CCO2
(7)
Battery backup
current
V
CC0
= V
BAT
0.2V 100 100 µA
1. Valid for ambient operating temperature: TA = –40 to 85°C; VCC = 4.5 to 5.5V or 2.7 to 3.6V (except where noted).
2. Applies to all input pins except RST
, which is pulled internally to V
CCI
.
3. Measured without RAM connected.
4. ICCO1 is the maximum average load current the device can supply to external memory.
5. Voltages are referenced to Ground.
6. Measured with load shown in Figure 10 on page 19.
7. ICCO2 is the maximum average load current that the device can supply to memory in the battery backup mode.
M41T315Y, M41T315V, M41T315W DC and AC parameters
21/30
Figure 11. Power down/up mode AC waveforms
Table 10. Crystal electrical characteristics (externally supplied)
Symbol Parameter
(1)(2)
1. These values are externally supplied. STMicroelectronics recommends the KDS DT-38:
1TA/1TC252E127, Tuning Fork Type (thruhole) or the DMX-26S: 1TJS125FH2A212, (SMD) quartz crystal
for industrial temperature operations. KDS can be contacted at kouhou@ kdsj.co.jp or
http://www.kdsj.co.jp for further information on this crystal type.
2. Load capacitors are integrated within the M41T315Y/V/W. Circuit board layout considerations for the
32.768kHz crystal of minimum trace lengths and isolation from RF generating signals should be taken into
account.
Min Typ Max Unit
f
O
Resonant frequency 32.768 kHz
R
S
Series resistance 60 kΩ
C
L
Load capacitance 12.5 pF
Table 11. Power down/up trip points DC characteristics
Symbol Parameter
(1)(2)
1. Valid for ambient operating temperature: TA = –40 to 85°C; VCC = 4.5 to 5.5V or 2.7 to 3.6V (except
where noted).
2. Measured at 25°C.
Min Max Unit
t
REC
V
PFD
(max) to CEI low 1.5 2.5 ms
t
F
V
PFD
(max) to V
PFD
(min) V
CC
fall time 300 µs
t
FB
V
PFD
(min) to V
SO
V
CC
fall time 10 µs
t
R
V
PFD
(min) to V
PFD
(max) V
CC
rise time 0 µs
t
PF
CEI high to power-fail 0 µs
t
PD
(3)(4)
3. Measured with load shown in Figure 10 on page 19.
4. Input pulse rise and fall times equal 10ns
CEI propagation delay
M41T315Y 10 ns
M41T315V/W 15 ns
V
CC
V
BAT
 0.2V
V
BAT
 0.2V
CEI
CEO
tPD
tF
tPF
tR
tREC
tPD
V
SO
tFB
V
PFD
(max)
V
PFD
(min)
AI04257
DON’T CARE

M41T315V-85MH6E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Real Time Clock Serial Access 85ns
Lifecycle:
New from this manufacturer.
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