NXP Semiconductors
BGU8061
low-noise high-linearity amplifier
BGU8061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 2 — 27 January 2017
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4 Quick reference data
Table 1. Quick reference data
f = 900 MHz; V
CC
= 5 V; T
amb
= 25 °C; input and output 50 Ω; unless otherwise specified. All RF parameters are measured
on an application board with the circuit as shown in Figure 29 and components listed in Table 9 implemented. This board is
optimized for f = 900 MHz.
Symbol Parameter Conditions Min Typ Max Unit
LNA enable; bypass off - 70 85 mAI
CC
supply current
LNA disable; bypass on - 3 5 mA
LNA enable; bypass off 19 20.5 22 dBG
ass
associated gain
LNA disable; bypass on −1.6 −1.0 - dB
NF noise figure LNA enable; bypass off
[1]
- 1.1 1.8 dB
P
L(1dB)
output power at 1 dB gain compression LNA enable; bypass off 19 20.5 - dBm
2-tone; tone spacing = 1 MHz; PL = 5 dBm per tone
LNA enable; bypass off 33.5 36.5 - dBm
IP3
O
output third-order intercept point
LNA disable; bypass on - 44 - dBm
[1] Connector and Printed-Circuit Board (PCB) losses have been de-embedded.
5 Ordering information
Table 2. Ordering information
PackageType
number
Name Description Version
BGU8061 HVSON10 plastic thermal enhanced very thin small outline package; no leads;
10 terminals; body 3 mm × 3 mm × 0.85 mm
SOT650-2
6 Block diagram
aaa-023265
Bias
V
ctrl1
i.c.
RF
OUT
n.c.
V
CC
V
ctrl2
i.c.
RF
IN
i.c.
n.c.
Figure 1. Block diagram
