NXP Semiconductors
BGU8061
low-noise high-linearity amplifier
BGU8061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 2 — 27 January 2017
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11 Characteristics
Table 7. Characteristics
f = 900 MHz; V
CC
= 5 V; T
amb
= 25 °C; input and output 50 Ω; unless otherwise specified. All RF parameters are measured
on an application board with the circuit as shown in Figure 29 and components listed in Table 9 implemented. This board is
optimized for f = 900 MHz.
Symbol Parameter Conditions Min Typ Max Unit
LNA enable; bypass off - 70 85 mAI
CC
supply current
LNA disable; bypass on - 3 5 mA
LNA enable; bypass off 19 20.5 22 dBG
ass
associated gain
LNA disable; bypass on −1.6 −1.0 - dB
within 100 MHz bandwidth; LNA enable; bypass off
700 MHz ≤ f ≤ 1500 MHz - 0.9 - dB
G
flat
gain flatness
1000 MHz ≤ f ≤ 1500 MHz - 0.8 - dB
NF noise figure LNA enable; bypass off
[1]
- 1.1 1.8 dB
ΔG gain variation 700 MHz ≤ f ≤ 1500 MHz - 5.5 - dB
P
L(1dB)
output power at 1 dB
gain compression
LNA enable; bypass off 19 20.5 - dBm
2-tone; tone spacing = 1 MHz; P
L
= 5 dBm per tone
LNA enable; bypass off 33.5 36.5 - dBm
IP3
O
output third-order
intercept point
LNA disable; bypass on - 44 - dBm
LNA enable; bypass off - 10 - dBRL
in
input return loss
LNA disable; bypass on - 15 - dB
LNA enable; bypass off - 10 - dBRL
out
output return loss
LNA disable; bypass on - 15 - dB
LNA disable; bypass off - 30 - dBISL isolation
LNA enable; bypass off - 20 - dB
t
s(pon)
power-on settling time P
i
= −20 dBm - 0.5 - μs
t
s(poff)
power-off settling time P
i
= −20 dBm - 0.1 - μs
K Rollett stability factor both on-state and off-state up to f = 20 GHz 1 - - -
[1] Connector and Printed-Circuit Board (PCB) losses have been de-embedded.
