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BGU8061J

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
NXP Semiconductors
BGU8061
low-noise high-linearity amplifier
BGU8061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 2 — 27 January 2017
10 / 17
aaa-023245
0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
-40.0
-30.0
-20.0
-10.0
0.0
f (GHz)
RL
out
RL
out
(dB)(dB)
(1)(1)
(2)(2)
(3)(3)
V
CC
= 5 V
(1) T
amb
= −40 °C
(2) T
amb
= +25 °C
(3) T
amb
= +95 °C
Figure 15. Output return loss as a function of frequency
Bypass mode; typical values
aaa-023246
0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
-40.0
-30.0
-20.0
-10.0
0.0
f (GHz)
RL
out
RL
out
(dB)(dB)
(3)(3)
(2)(2)
(1)(1)
T
amb
= +25 °C
(1) V
CC
= 4.75 V
(2) V
CC
= 5 V
(3) V
CC
= 5.25 V
Figure 16. Output return loss as a function of frequency
Bypass mode; typical values
aaa-023247
0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
-45.0
-40.0
-35.0
-30.0
-25.0
f (GHz)
ISLISL
(dB)(dB)
(3)(3)
(2)(2)
(1)(1)
V
CC
= 5 V
(1) T
amb
= −40 °C
(2) T
amb
= +25 °C
(3) T
amb
= +95 °C
Figure 17. Isolation as a function of frequency
Isolation mode; typical values
aaa-023250
0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
-45
-40
-35
-30
-25
f (GHz)
ISLISL
(dB)(dB)
(2)(2)
(1)(1)
(3)(3)
T
amb
= +25 °C
(1) V
CC
= 4.75 V
(2) V
CC
= 5 V
(3) V
CC
= 5.25 V
Figure 18. Isolation as a function of frequency
Isolation mode; typical values
NXP Semiconductors
BGU8061
low-noise high-linearity amplifier
BGU8061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 2 — 27 January 2017
11 / 17
aaa-023251
0 0.5 1 1.5 2 2.5 3 3.5 4
-30
-20
-10
0
10
20
30
f (GHz)
s-parss-pars
(dB)(dB)
S11S11
S21S21
S12S12
S22S22
V
CC
= 5 V; T
amb
= +25 °C
Figure 19. Wideband S-parameters as function of
frequency Gain mode; typical values
aaa-023252
0 0.5 1 1.5 2 2.5 3 3.5 4
-40.0
-30.0
-20.0
-10.0
0.0
f (GHz)
s-parss-pars
(dB)(dB)
S11S11
S22S22
S12S12
S22S22
V
CC
= 5 V; T
amb
= +25 °C
Figure 20. Wideband S-parameters as function of
frequency Bypass mode; typical values
aaa-023253
0 0.5 1 1.5 2 2.5 3 3.5 4
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
f (GHz)
s-parss-pars
(dB)(dB)
S11S11
S21S21
S12S12
S22S22
V
CC
= 5 V; T
amb
= +25 °C
Figure 21. Wideband S-parameters as function of
frequency Isolation mode; typical values
aaa-023254
0 4 8 12 16 20
0.0
1.0
2.0
3.0
4.0
5.0
f (GHz)
KK
(3)(3)
(2)(2)
(1)(1)
V
CC
= 5 V
(1) T
amb
= −40 °C
(2) T
amb
= +25 °C
(3) T
amb
= +95 °C
Figure 22. Rollett Stability factor as function of
frequency Gain mode; typical values
NXP Semiconductors
BGU8061
low-noise high-linearity amplifier
BGU8061 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 2 — 27 January 2017
12 / 17
aaa-023255
0.7 0.9 1.1 1.3 1.5
25
27.5
30
32.5
35
37.5
40
f (GHz)
IP3
O
IP3
O
(dBm)(dBm)
(1)(1)
(2)(2)
(3)(3)
V
CC
= 5 V
(1) T
amb
= −40 °C
(2) T
amb
= +25 °C
(3) T
amb
= +95 °C
Figure 23. Output third-order intercept point as a
function of frequency Gain mode; typical values
aaa-023256
0.7 0.9 1.1 1.3 1.5
25.0
27.5
30.0
32.5
35.0
37.5
40.0
f (GHz)
IP3
O
IP3
O
(dBm)(dBm)
(3)(3)
(2)(2)
(1)(1)
T
amb
= +25 °C
(1) V
CC
= 4.75 V
(2) V
CC
= 5 V
(3) V
CC
= 5.25 V
Figure 24. Output third-order intercept point as a
function of frequency Gain mode; typical values
aaa-023258
0.7 0.9 1.1 1.3 1.5
35.0
37.5
40.0
42.5
45.0
47.5
50.0
f (GHz)
IP3
O
IP3
O
(dBm)(dBm)
(1)(1)
(2)(2)
(3)(3)
V
CC
= 5 V
(1) T
amb
= −40 °C
(2) T
amb
= +25 °C
(3) T
amb
= +95 °C
Figure 25. Output third-order intercept point as a
function of frequency Bypass mode; typical values
aaa-023260
0.7 0.9 1.1 1.3 1.5
35
37.5
40
42.5
45
47.5
50
f (GHz)
IP3
O
IP3
O
(dBm)(dBm)
(3)(3)
(2)(2)
(1)(1)
T
amb
= +25 °C
(1) V
CC
= 4.75 V
(2) V
CC
= 5 V
(3) V
CC
= 5.25 V
Figure 26. Output third-order intercept point as a
function of frequency Bypass mode; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

BGU8061J

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Manufacturer:
NXP Semiconductors
Description:
low-noise high-linearity amplifie
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