IRLML0060TRPbF
2 2016-12-20
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– 98 116
m
V
GS
= 4.5V, I
D
= 2.2A
––– 78 92 V
GS
= 10V, I
D
= 2.7A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.5 V V
DS
= V
GS
, I
D
= 25µA
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
= 60V, V
GS
= 0V
––– ––– 250 V
DS
= 60V,V
GS
= 0V,T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -16V
R
G
Internal Gate Resistance ––– 1.6 –––
gfs Forward Trans conductance 7.6 ––– ––– S V
DS
= 25V, I
D
= 2.7A
Q
g
Total Gate Charge ––– 2.5 –––
I
D
= 2.7A
Q
gs
Gate-to-Source Charge ––– 0.7 ––– V
DS
= 30V
Q
gd
Gate-to-Drain (‘Miller’) Charge ––– 1.3 –––
V
GS
= 4.5V
t
d(on)
Turn-On Delay Time ––– 5.4 –––
ns
V
DD
= 30V
t
r
Rise Time ––– 6.3 –––
I
D
= 1.0A
t
d(off)
Turn-Off Delay Time ––– 6.8 –––
R
G
= 6.8
t
f
Fall Time ––– 4.2 –––
V
GS
= 4.5V
C
iss
Input Capacitance ––– 290 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 37 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 21 –––
ƒ = 1.0MHz
nC
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 1.6
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 11
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C,I
S
= 2.7A,V
GS
= 0V
t
rr
Reverse Recovery Time ––– 14 21 ns
T
J
= 25°C ,V
R
= 30V, I
F
= 1.6A
Q
rr
Reverse Recovery Charge ––– 13 20 nC
di/dt = 100A/µs
