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IRLML0060TRPBF

P1-P3P4-P6P7-P9P10-P10
IRLML0060TRPbF
4 2016-12-20
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
01234567
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
I
D
= 2.7A
0.20.40.60.81.01.2
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
0 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
T
A
= 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
IRLML0060TRPbF
5 2016-12-20
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150
T
A
, Ambient Temperature (°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t
1
, Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
1000
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
°
C/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
IRLML0060TRPbF
6 2016-12-20
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 14a. Basic Gate Charge Waveform
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 14b. Gate Charge Test Circuit
3 4 5 6 7 8 9 10
V
GS,
Gate -to -Source Voltage (V)
0
100
200
300
400
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
I
D
= 2.7A
T
J
= 25°C
T
J
= 125°C
0 2 4 6 8 10 12
I
D
, Drain Current (A)
50
75
100
125
150
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
Vgs = 10V
Vgs = 4.5V
P1-P3P4-P6P7-P9P10-P10

IRLML0060TRPBF

Mfr. #:
Buy IRLML0060TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 60V 2.7A 92mOhm 2.5nC Qg
Lifecycle:
New from this manufacturer.
Delivery:
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