A
Microchip Technology Company
©2011 Silicon Storage Technology, Inc. DS25040A 05/11
Data Sheet
www.microchip.com
16 Mbit (x8) Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
Features
Organized as 2M x8
Single Voltage Read and Write Operations
2.7-3.6V
Superior Reliability
Endurance: 100,000 Cycles (Typical)
Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
Active Current: 9 mA (typical)
Standby Current: 3 µA (typical)
Auto Low Power Mode: 3 µA (typical)
Hardware Block-Protection/WP# Input Pin
Top Block-Protection (top 64 KByte)
for SST39VF1682
Bottom Block-Protection (bottom 64 KByte)
for SST39VF1681
Sector-Erase Capability
Uniform 4 KByte sectors
Block-Erase Capability
Uniform 64 KByte blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Security-ID Feature
SST: 128 bits; User: 128 bits
Fast Read Access Time:
–70ns
Latched Address and Data
Fast Erase and Byte-Program:
Sector-Erase Time: 18 ms (typical)
Block-Erase Time: 18 ms (typical)
Chip-Erase Time: 40 ms (typical)
Byte-Program Time: 7 µs (typical)
Automatic Write Timing
Internal V
PP
Generation
End-of-Write Detection
Toggle Bits
Data# Polling
CMOS I/O Compatibility
JEDEC Standard
Flash EEPROM Pinouts and Command sets
Packages Available
48-ball TFBGA (6mm x 8mm)
48-lead TSOP (12mm x 20mm)
All devices are RoHS compliant
The SST39VF1681 / SST39VF1682 are 2M x8 CMOS Multi-Purpose Flash Plus
(MPF+) manufactured with SST proprietary, high performance CMOS Super-
Flash® technology. The split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with alternate approaches.
The SST39VF1681 / SST39VF1682 write (Program or Erase) with a 2.7-3.6V
power supply. These devices conforms to JEDEC standard pinouts for x8 memo-
ries.
©2011 Silicon Storage Technology, Inc. DS25040A 05/11
2
16 Mbit Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
Data Sheet
A
Microchip Technology Company
Product Description
The SST39VF168x devices are 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s
proprietary, high performance CMOS SuperFlash® technology. The split-gate cell design and thick-oxide
tunneling injector attain better reliability and manufacturability compared with alternate approaches. The
SST39VF168x write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC
standard pinouts for x8 memories.
Featuring high performance Byte-Program, the SST39VF168x devices provide a typical Byte-Program
time of 7 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program
operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protec-
tion schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices
are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater
than 100 years.
The SST39VF168x devices are suited for applications that require convenient and economical updat-
ing of program, configuration, or data memory. For all system applications, they significantly improve
performance and reliability, while lowering power consumption. They inherently use less energy during
Erase and Program than alternative flash technologies. The total energy consumed is a function of the
applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter erase time, the total energy consumed dur-
ing any Erase or Program operation is less than alternative flash technologies. These devices also
improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the SST39VF168x are offered in both 48-ball TFBGA
and 48-lead TSOP packages. See Figures 2 and 3 for pin assignments.
©2011 Silicon Storage Technology, Inc. DS25040A 05/11
3
16 Mbit Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
Data Sheet
A
Microchip Technology Company
Block Diagram
Figure 1: SST39VF1681 / SST39VF1682 Block Diagram
Pin Description
Figure 2: Pin Assignments for 48-lead TFBGA
Y-Decoder
I/O Buffers and Data Latches
1243 B1.0
Address Buffer Latches
X-Decoder
DQ
7
-DQ
0
Memory Address
OE#
CE#
WE#
SuperFlash
Memory
Control Logic
WP#
RESET#
1243 48-tfbga B3K P1.0
TOP VIEW (balls facing down)
6
5
4
3
2
1
A14
A10
WE#
NC
A8
A4
A13
A9
RST#
WP#
A18
A5
A15
A11
NC
A19
A7
A3
A16
A12
A20
NC
A6
A2
A17
DQ7
DQ5
DQ2
DQ0
A1
NC
NC
NC
NC
NC
CE#
A0
NC
V
DD
NC
NC
OE#
V
SS
DQ6
DQ4
DQ3
DQ1
V
SS
ABCDEFGH

SST39VF1682-70-4I-EKE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.7 to 3.6V 16Mbit Multi-Purpose Flash
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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