©2011 Silicon Storage Technology, Inc. DS25040A 05/11
4
16 Mbit Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
Data Sheet
A
Microchip Technology Company
Figure 3: Pin Assignments for 48-lead TSOP
Table 1: Pin Description
Symbol Pin Name Functions
A
MS
1
-A
0
1. A
MS
= Most significant address
A
MS
=A
20
for SST39VF1681/1682
Address Inputs To provide memory addresses.
During Sector-Erase A
MS
-A
12
address lines will select the sector.
During Block-Erase A
MS
-A
16
address lines will select the block.
DQ
7
-DQ
0
Data Input/output To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
WP# Write Protect To protect the top/bottom boot block from Erase/Program operation when
grounded.
RST# Reset To reset and return the device to Read mode.
CE# Chip Enable To activate the device when CE# is low.
OE# Output Enable To gate the data output buffers.
WE# Write Enable To control the Write operations.
V
DD
Power Supply To provide power supply voltage: 2.7-3.6V
V
SS
Ground
NC No Connection Unconnected pins.
T1.1 25040
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A17
NC
V
SS
A0
DQ7
NC
DQ6
NC
DQ5
NC
DQ4
V
DD
NC
DQ3
NC
DQ2
NC
DQ1
NC
DQ0
OE#
V
SS
CE#
A1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1243 48-tsop P2.0
Standard Pinout
To p V i ew
Die Up
A16
A15
A14
A13
A12
A11
A10
A9
A20
NC
WE#
RST#
NC
WP#
NC
A19
A18
A8
A7
A6
A5
A4
A3
A2
©2011 Silicon Storage Technology, Inc. DS25040A 05/11
5
16 Mbit Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
Data Sheet
A
Microchip Technology Company
Device Operation
Commands are used to initiate the memory operation functions of the device. Commands are written
to the device using standard microprocessor write sequences. A command is written by asserting WE#
low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever
occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first.
The SST39VF168x also have the Auto Low Power mode which puts the device in a near standby
mode after data has been accessed with a valid Read operation. This reduces the I
DD
active read cur-
rent from typically 9 mA to typically 3 µA. The Auto Low Power mode reduces the typical I
DD
active
read current to the range of 2 mA/MHz of Read cycle time. The device exits the Auto Low Power mode
with any address transition or control signal transition used to initiate another Read cycle, with no
access time penalty. Note that the device does not enter Auto-Low Power mode after power-up with
CE# held steadily low, until the first address transition or CE# is driven high.
Read
The Read operation of the SST39VF168x is controlled by CE# and OE#, both have to be low for the system
to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected
and only standby power is consumed. OE# is the output control and is used to gate data from the output
pins. The data bus is in high impedance state when either CE# or OE# is high. Refer to the Read cycle tim-
ing diagram for further details (Figure 4).
Byte-Program Operation
The SST39VF168x are programmed on a byte-by-byte basis. Before programming, the sector where
the byte exists must be fully erased. The Program operation is accomplished in three steps. The first
step is the three-byte load sequence for Software Data Protection. The second step is to load byte
address and byte data. During the Byte-Program operation, the addresses are latched on the falling
edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of either CE#
or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after
the rising edge of the fourth WE# or CE#, whichever occurs first. The Program operation, once initi-
ated, will be completed within 10 µs. See Figures 5 and 6 for WE# and CE# controlled Program opera-
tion timing diagrams and Figure 20 for flowcharts. During the Program operation, the only valid reads
are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform
additional tasks. Any commands issued during the internal Program operation are ignored. During the
command sequence, WP# should be statically held high or low.
Sector/Block-Erase Operation
The Sector- (or Block-) Erase operation allows the system to erase the device on a sector-by-sector (or
block-by-block) basis. The SST39VF168x offer both Sector-Erase and Block-Erase mode. The sector
architecture is based on uniform sector size of 4 KByte. The Block-Erase mode is based on uniform
block size of 64 KByte. The Sector-Erase operation is initiated by executing a six-byte command
sequence with Sector-Erase command (50H) and sector address (SA) in the last bus cycle. The Block-
Erase operation is initiated by executing a six-byte command sequence with Block-Erase command
(30H) and block address (BA) in the last bus cycle. The sector or block address is latched on the falling
edge of the sixth WE# pulse, while the command (30H or 50H) is latched on the rising edge of the sixth
WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase opera-
tion can be determined using either Data# Polling or Toggle Bit methods. See Figures 10 and 11 for
©2011 Silicon Storage Technology, Inc. DS25040A 05/11
6
16 Mbit Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
Data Sheet
A
Microchip Technology Company
timing waveforms and Figure 24 for the flowchart. Any commands issued during the Sector- or Block-
Erase operation are ignored. When WP# is low, any attempt to Sector- (Block-) Erase the protected
block will be ignored. During the command sequence, WP# should be statically held high or low.
Erase-Suspend/Erase-Resume Commands
The Erase-Suspend operation temporarily suspends a Sector- or Block-Erase operation thus allowing
data to be read from any memory location, or program data into any sector/block that is not suspended
for an Erase operation. The operation is executed by issuing one byte command sequence with Erase-
Suspend command (B0H). The device automatically enters read mode typically within 20 µs after the
Erase-Suspend command had been issued. Valid data can be read from any sector or block that is not
suspended from an Erase operation. Reading at address location within erase-suspended sectors/
blocks will output DQ
2
toggling and DQ
6
at “1”. While in Erase-Suspend mode, a Byte-Program opera-
tion is allowed except for the sector or block selected for Erase-Suspend.
To resume Sector-Erase or Block-Erase operation which has been suspended the system must issue Erase
Resume command. The operation is executed by issuing one byte command sequence with Erase Resume com-
mand (30H) at any address in the last Byte sequence.
Chip-Erase Operation
The SST39VF168x provide a Chip-Erase operation, which allows the user to erase the entire memory array to
the “1” state. This is useful when the entire device must be quickly erased.
The Chip-Erase operation is initiated by executing a six-byte command sequence with Chip-Erase command
(10H) at address AAAH in the last byte sequence. The Erase operation begins with the rising edge of the sixth
WE# or CE#, whichever occurs first. During the Erase operation, the only valid read is Toggle Bit or Data# Poll-
ing. See Table 6 for the command sequence, Figure 10 for timing diagram, and Figure 24 for the flowchart.
Any commands issued during the Chip-Erase operation are ignored. When WP# is low, any attempt to Chip-
Erase will be ignored. During the command sequence, WP# should be statically held high or low.
Write Operation Status Detection
The SST39VF168x provide two software means to detect the completion of a Write (Program or
Erase) cycle, in order to optimize the system write cycle time. The software detection includes two sta-
tus bits: Data# Polling (DQ
7
) and Toggle Bit (DQ
6
). The End-of-Write detection mode is enabled after
the rising edge of WE#, which initiates the internal Program or Erase operation.
The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data#
Polling or Toggle Bit read may be simultaneous with the completion of the write cycle. If this occurs, the sys-
tem may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ
7
or DQ
6
.In
order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop
to read the accessed location an additional two (2) times. If both reads are valid, then the device has com-
pleted the Write cycle, otherwise the rejection is valid.
Data# Polling (DQ
7
)
When the SST39VF168x are in the internal Program operation, any attempt to read DQ
7
will produce the
complement of the true data. Once the Program operation is completed, DQ
7
will produce true data. Note that
even though DQ
7
may have valid data immediately following the completion of an internal Write operation, the
remaining data outputs may still be invalid: valid data on the entire data bus will appear in subsequent succes-
sive Read cycles after an interval of 1 µs. During internal Erase operation, any attempt to read DQ
7
will pro-

SST39VF1682-70-4I-EKE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.7 to 3.6V 16Mbit Multi-Purpose Flash
Lifecycle:
New from this manufacturer.
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