IRLR2905TRPBF

P1-P3 P4-P6 P7-P9 P10-P11

IRLR/U2905PbF

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

400

800

1200

1600

2000

2400

2800

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

3

6

9

12

15

0 10203040506070

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

A

FOR TEST CIRCUIT

SEE FIGURE 13

V = 44V

V = 28V

I = 25A

DS

DS

D

10

100

1000

0.4 0.8 1.2 1.6 2.0 2.4

T = 25°C

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

A

T = 175°C

J

1

10

100

1000

1 10 100

V , Drain-to-Source Voltage (V)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

10µs

100µs

1ms

10ms

A

T = 25°C

T = 175°C

Single Pulse

C

J

IRLR/U2905PbF

www.irf.com 5

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

5V

+

-

V

DD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150 175

0

10

20

30

40

50

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRLR/U2905PbF

6 www.irf.com

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

0

100

200

300

400

500

25 50 75 100 125 150 175

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Starting T , Junction Temperature (°C)

I

TOP 10A

17A

BOTTOM 25A

V = 25V

D

DD

P1-P3 P4-P6 P7-P9 P10-P11

IRLR2905TRPBF

Mfr. #:

Buy IRLR2905TRPBF

Manufacturer:

Infineon / IR

Description:

MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC

Lifecycle:

New from this manufacturer.

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