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PMP5201Y,135

P1-P3P4-P6P7-P9P10-P12P13-P15
PMP5201V_G_Y_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 28 August 2009 3 of 14
NXP Semiconductors
PMP5201V; PMP5201G; PMP5201Y
PNP/PNP matched double transistors
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 5. Marking codes
Type number Marking code
[1]
PMP5201V EC
PMP5201G R5*
PMP5201Y S9*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - −50 V
V
CEO
collector-emitter voltage open base - −45 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current - −100 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT666
[1][2]
- 200 mW
SOT353
[1]
- 200 mW
SOT363
[1]
- 200 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
SOT666
[1][2]
- 300 mW
SOT353
[1]
- 300 mW
SOT363
[1]
- 300 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
PMP5201V_G_Y_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 28 August 2009 4 of 14
NXP Semiconductors
PMP5201V; PMP5201G; PMP5201Y
PNP/PNP matched double transistors
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT666
[1][2]
- - 625 K/W
SOT353
[1]
- - 625 K/W
SOT363
[1]
- - 625 K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT666
[1][2]
- - 416 K/W
SOT353
[1]
- - 416 K/W
SOT363
[1]
- - 416 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current
V
CB
= −30 V;
I
E
=0A
--−15 nA
V
CB
= −30 V;
I
E
=0A;
T
j
= 150 °C
--−5 µA
I
EBO
emitter-base cut-off
current
V
EB
= −5V;
I
C
=0A
--−100 nA
h
FE
DC current gain V
CE
= −5V;
I
C
= −10 µA
- 250 -
V
CE
= −5V;
I
C
= −2mA
200 290 450
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
- −50 −200 mV
I
C
= −100 mA;
I
B
= −5mA
- −200 −400 mV
V
BEsat
base-emitter saturation
voltage
I
C
= −10 mA;
I
B
= −0.5 mA
[1]
- −760 - mV
I
C
= −100 mA;
I
B
= −5mA
[1]
- −920 - mV
PMP5201V_G_Y_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 28 August 2009 5 of 14
NXP Semiconductors
PMP5201V; PMP5201G; PMP5201Y
PNP/PNP matched double transistors
[1] V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
[2] V
BE
decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
V
BE
base-emitter voltage V
CE
= −5V;
I
C
= −2mA
[2]
−600 −650 −700 mV
V
CE
= −5V;
I
C
= −10 mA
[2]
--−760 mV
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A;
f=1MHz
- - 2.2 pF
C
e
emitter capacitance V
EB
= −0.5 V;
I
C
=i
c
=0A;
f=1MHz
-10-pF
f
T
transition frequency V
CE
= −5V;
I
C
= −10 mA;
f = 100 MHz
100 175 - MHz
NF noise figure V
CE
= −5V;
I
C
= −0.2 mA;
R
S
=2kΩ;
f = 10 Hz to
15.7 kHz
- 1.6 - dB
V
CE
= −5V;
I
C
= −0.2 mA;
R
S
=2kΩ;
f = 1 kHz;
B = 200 Hz
- 3.1 - dB
Per device
h
FE1
/h
FE2
h
FE
matching V
CE
= −5V;
I
C
= −2mA
[3]
0.98 1 -
V
BE1
−V
BE2
V
BE
matching V
CE
= −5V;
I
C
= −2mA
[4]
--2mV
Table 8. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
P1-P3P4-P6P7-P9P10-P12P13-P15

PMP5201Y,135

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Bipolar Transistors - BJT MATCHED PAIR
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