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PMP5201Y,135
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
PMP5201V_G_Y_3
© NXP B.V
. 2009. All rights reserved.
Product data sheet
Rev
. 03 — 28 August 2009
6 of 14
NXP Semiconductors
PMP5201V
; PMP5201G; PMP5201Y
PNP/PNP matched double transistor
s
T
amb
=2
5
°
CV
CE
=
−
5V
(1)
T
amb
= 100
°
C
(2)
T
amb
=2
5
°
C
(3)
T
amb
=
−
55
°
C
Fig 1.
Collector current as a function of
collector-emitter v
olta
ge; typical values
Fig 2.
DC current gain as a function of collector
current; typical values
I
C
/I
B
=2
0
(1)
T
amb
=
−
55
°
C
(2)
T
amb
=2
5
°
C
(3)
T
amb
= 100
°
C
I
C
/I
B
=2
0
(1)
T
amb
= 100
°
C
(2)
T
amb
=2
5
°
C
(3)
T
amb
=
−
55
°
C
Fig 3.
Base-emitter saturation v
oltage as a function
of collector current; typical values
Fig 4.
Collector
-emitter saturation volta
ge as a
function of collector current; typical values
006aaa540
V
CE
(V)
0
−
10
−
8
−
4
−
6
−
2
−
0.08
−
0.12
−
0.04
−
0.16
−
0.20
I
C
(A)
0
−
0.25
I
B
(mA) =
−
2.5
−
0.5
−
0.75
−
1.0
−
1.25
−
1.5
−
1.75
−
2.0
−
2.25
006aaa541
200
400
600
h
FE
0
I
C
(mA)
−
10
−
2
−
10
3
−
10
2
−
10
−
1
−
10
−
1
(1)
(2)
(3)
006aaa542
I
C
(mA)
−
10
−
1
−
10
3
−
10
2
−
1
−
10
−
0.5
−
0.9
−
1.3
−
0.3
−
0.7
−
1.1
V
BEsat
(V)
−
0.1
(1)
(2)
(3)
006aaa543
−
1
−
10
−
1
−
10
V
CEsat
(V)
−
10
−
2
I
C
(mA)
−
10
−
1
−
10
3
−
10
2
−
1
−
10
(1)
(2)
(3)
PMP5201V_G_Y_3
© NXP B.V
. 2009. All rights reserved.
Product data sheet
Rev
. 03 — 28 August 2009
7 of 14
NXP Semiconductors
PMP5201V
; PMP5201G; PMP5201Y
PNP/PNP matched double transistor
s
V
CE
=
−
5 V
; T
amb
=2
5
°
CV
CE
=
−
5 V
; T
amb
=2
5
°
C
Fig 5.
Base-emitter v
oltage as a function of
collector
current; typical values
Fig 6.
T
ransition frequency as a function of collector
current; typical values
f = 1 MHz; T
amb
=2
5
°
C
f = 1 MHz; T
amb
=2
5
°
C
Fig 7.
Collector capacitance as a function of
collector-base v
olta
ge; typical values
Fig 8.
Emitter capacitance as a function of
emitter-base v
olta
ge; typical values
006aaa544
−
0.6
−
0.8
−
1
V
BE
(V)
−
0.4
I
C
(mA)
−
10
−
1
−
10
3
−
10
2
−
1
−
10
I
C
(mA)
−
1
−
10
2
−
10
006aaa545
10
2
10
3
f
T
(MHz)
10
V
CB
(V)
0
−
10
−
8
−
4
−
6
−
2
006aaa546
4
2
6
8
C
c
(pF)
0
006aaa547
V
EB
(V)
0
−
6
−
4
−
2
9
11
7
13
15
C
e
(pF)
5
PMP5201V_G_Y_3
© NXP B.V
. 2009. All rights reserved.
Product data sheet
Rev
. 03 — 28 August 2009
8 of 14
NXP Semiconductors
PMP5201V
; PMP5201G; PMP5201Y
PNP/PNP matched double transistor
s
8.
Application inf
ormation
9.
P
ac
ka
ge outline
Fig 9.
Current mirror
Fig 10.
Differential amplifier
006aaa524
V
CC
l
out
R1
TR2
TR1
006aaa526
IN2
IN1
TR2
TR1
OUT2
V
−
V
+
OUT1
Fig 11.
Pac
kage outline SO
T666
Fig 12.
Pac
kage outline SO
T353 (SC-88A)
Fig 13.
Pac
kage outline SO
T363 (SC-88)
Dimensions in mm
04-11-08
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.27
0.17
0.5
pin 1 index
12
3
4
5
6
0.6
0.5
0.3
0.1
04-11-16
Dimensions in mm
0.25
0.10
0.3
0.2
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
13
2
4
5
06-03-16
Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
13
2
4
65
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
PMP5201Y,135
Mfr. #:
Buy PMP5201Y,135
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT MATCHED PAIR
Lifecycle:
New from this manufacturer.
Delivery:
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