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HMC8121-SX

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
81 GHz to 86 GHz,
E-Band Variable Gain Amplifier
Data Sheet
HMC8121
Rev. B Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2016–2017 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
Gain: 22 dB typical
Wide gain control range: 17 dB typical
Output third-order intercept (OIP3): 27.5 dBm typical
Output power for 1 dB compression (P1dB): 20 dBm typical
Saturated output power (P
SAT
): 21 dBm typical
DC supply: 4 V at 265 mA
No external matching required
Die size: 3.599 mm × 1.369 mm × 0.05 mm
APPLICATIONS
E-band communication systems
High capacity wireless backhaul radio systems
Test and measurement
GENERAL DESCRIPTION
The HMC8121 is an integrated E-band, gallium arsenide (GaAs),
pseudomorphic (pHEMT), monolithic microwave integrated
circuit (MMIC), variable gain amplifier and/or driver amplifier
that operates from 81 GHz to 86 GHz. The HMC8121 provides up
to 22 dB of gain, 20 dBm output P1dB, 27.5 dBm of OIP3, and
21 dBm of P
SAT
while requiring only 265 mA from a 4 V power
supply. Two gain control voltages (V
CTL1
and V
CTL2
) are provided
to allow up to 17 dB of variable gain control. The HMC8121
exhibits excellent linearity and is optimized for E-band
communications and high capacity wireless backhaul radio
systems. All data is taken with the chip in a 50 Ω test fixture
connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon
on each port.
FUNCTIONAL BLOCK DIAGRAM
28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7
RFIN
V
GG1
/V
GG2
V
DD1
V
DD2
ENV
DET
V
CTL1
V
CTL2
V
GG3
V
DD3
V
GG4
V
DD4
V
GG5
V
GG6
V
DD5
V
DD6
V
REF
V
DET
1.6kΩ
1.6kΩ
123
4
5
6
RFOUT
HMC8121
13154-001
Figure 1.
HMC8121 Data Sheet
Rev. B | Page 2 of 16
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Interface Schematics..................................................................... 6
Typical Performance Characteristics ..............................................7
Theory of Operation ...................................................................... 12
Typical Application Circuit ........................................................... 13
Assembly Diagram ..................................................................... 14
Mounting and Bonding Techniques for Millimeterwave GaAs
MMICs ............................................................................................. 15
Handling Precautions ................................................................ 15
Mounting ..................................................................................... 15
Wire Bonding .............................................................................. 15
Outline Dimensions ....................................................................... 16
Ordering Guide .......................................................................... 16
REVISION HISTORY
4/2017—Rev. A to Rev. B
Updated Outline Dimensions ....................................................... 16
2/2016—Revision A: Initial Version
Data Sheet HMC8121
Rev. B | Page 3 of 16
SPECIFICATIONS
T
A
= 25°C, V
DDx
= 4 V, V
CTLx
= −5 V, unless otherwise noted.
Table 1.
Parameter
Min Typ Max Unit
OPERATING CONDITIONS
RF Frequency Range
81 86 GHz
PERFORMANCE
Gain
19 22 dB
Gain Variation over Temperature
0.03 dB/°C
Gain Control Range
12 17 dB
Output Power for 1 dB Compression (P1dB)
16 20 dBm
Saturated Output Power (P
SAT
)
21 dBm
Output Third-Order Intercept (OIP3) at Maximum Gain
1
27.5 dBm
Input Return Loss
12 dB
Output Return Loss
10 dB
POWER SUPPLY
Total Supply Current (I
DD
)
2
265 mA
1
Data taken at power input (P
IN
) = −10 dBm/tone, 1 MHz spacing.
2
Set V
CTL1
/V
CTL2
= −5 V and then adjust V
GG1
/V
GG2
, V
GG3
, V
GG4
, V
GG5
, and V
GG6
from −2 V to 0 V to achieve a total drain current (I
DD
) = 265 mA.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

HMC8121-SX

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Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier E-band 81-86 GHz VGA
Lifecycle:
New from this manufacturer.
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