Data Sheet HMC8121
Rev. B | Page 13 of 16
TYPICAL APPLICATION CIRCUIT
A typical application circuit for the HMC8121 is provided in
Figure 38. For typical operation, drive the attenuator control
pads from a single control voltage. It is important to bypass all
the supply connections and attenuator control pads with
adequate bypassing capacitors. Use single-layer chip capacitors
with very high self-resonant frequency close to the HMC8121
die, bypassing each supply or control pad. Typically, 120 pF chip
capacitors are used, followed by 0.01 µF and 4.7 µF surface-mount
capacitors. Combine supply lines as shown in the application
circuit schematic to minimize external component count and
simplify power supply routing (see Figure 38). Pad 25 and Pad 26
are internally connected. Therefore, use either pad to connect
the external bypass components of V
DD1
/V
DD2
.
The HMC8121 uses several amplifier, detector, and attenuator
stages. All stages use depletion mode pHEMT transistors. It is
important to follow the following power-up bias sequence to
ensure transistor damage does not occur.
1. Apply a −5 V bias to the V
CTL1
and V
CTL2
pads.
2. Apply a −2 V bias to the V
GG3
to V
GG6
and V
GG1
/V
GG2
pads.
3. Apply 4 V to the V
DD1
to V
DD6
pads.
4. Adjust V
GG1
/V
GG2
and V
GG3
to V
GG6
between 2 V and 0 V
to achieve a total amplifier drain current of 265 mA.
After bias is established, adjust the V
CTL1
= V
CTL2
bias between
−5 V and 0 V to achieve the desired gain.
To power down the HMC8121, follow the reverse procedure.
For additional guidance on general bias sequencing, see the
MMIC Amplifier Biasing Procedure application note.
28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7
RFIN
V
GG1
/V
GG2
V
DD1
V
DD2
ENV
DET
V
CTL1
V
CTL2
V
GG3
V
DD3
V
GG4
V
DD4
V
GG5
V
GG6
V
DD5
V
DD6
V
REF
V
DET
1.6kΩ
1.6kΩ
1 2 3
4
5
6
RFOUT
120pF
0.01µF
4.7µF
120pF
0.01µF
4.7µF
V
GG1
/V
GG2
120pF 120pF120pF
120pF
0.01µF
4.7µF
V
GG3
, V
GG4
120pF
0.01µF
4.7µF
100kΩ
10kΩ 10kΩ
100kΩ
10kΩ
V
OUT
= V
REF
– V
DET
10kΩ
SUGGESTED CIRCUIT
+5V
+5V
–5V
V
DD6
V
REF
V
DET
120pF
0.01µF
4.7µF
V
DD3
, V
DD4
, V
DD5
0.01µF
4.7µF
V
GG5
, V
GG6
120pF
120pF
120pF
V
DD1
, V
DD2
120pF
0.01µF
4.7µF
V
CTL1
, V
CTL2
1000pF
ENV
DET
+4V
3.5kΩ
150Ω
13154-035
Figure 38. Typical Application Circuit
HMC8121 Data Sheet
Rev. B | Page 14 of 16
ASSEMBLY DIAGRAM
28 27 26 25 24 23 22 21 20 19 18 17
16 15 14 13 12 11 10 9 8 7
RFIN
V
GG1
/V
GG2
V
DD1
V
DD2
ENV
DET
V
CTL1
V
CTL2
V
GG3
V
DD3
V
GG4
V
DD4
V
GG5
V
GG6
V
DD5
V
DD6
V
REF
V
DET
1.6kΩ
1.6kΩ
1 2 3
4
5
6
RFOUT
3 MIL WIDE
GOLD RIBBON
(WEDGE BOND)
3 MIL WIDE
GOLD RIBBON
(WEDGE BOND)
120pF
0.01µF
3 MIL
NOMINAL
GAP
50Ω
TRANSMISSION
LINE
4.7µF 4.7µF 4.7µF 4.7µF 4.7µF 4.7µF 4.7µF
V
GG1
/V
GG2
V
GG3
, V
GG4
V
DD6
V
DD3
, V
DD4
, V
DD5
V
GG5
, V
GG6
V
DD1
, V
DD2
V
CTL1
, V
CTL2
13154-036
Figure 39. Assembly Diagram
Data Sheet HMC8121
Rev. B | Page 15 of 16
MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS
Attach the die directly to the ground plane eutectically or with
conductive epoxy.
To bring RF to and from the chip, use 50 Ω microstrip trans-
mission lines on 0.127 mm (5 mil) thick alumina thin film
substrates (see Figure 40).
RF GROUND PLANE
0.05mm (0.002") THICK GaAs MMIC
RIBBON BOND
0.127mm (0.005") THICK ALUMINA
THIN FILM SUBSTRATE
0.076mm
(0.003")
13154-037
Figure 40. Routing RF Signals
To minimize bond wire length, place microstrip substrates as
close to the die as possible. Typical die to substrate spacing is
0.076 mm to 0.152 mm (3 mil to 6 mil).
HANDLING PRECAUTIONS
To avoid permanent damage, adhere to the following
precautions.
Storage
All bare die ship in either waffle or gel-based ESD protective
containers, sealed in an ESD protective bag. After opening the
sealed ESD protective bag, all die must be stored in a dry
nitrogen environment.
Cleanliness
Handle the chips in a clean environment. Never use liquid
cleaning systems to clean the chip.
Static Sensitivity
Follow ESD precautions to protect against ESD strikes.
Transients
Suppress instrument and bias supply transients while bias is
applied. To minimize inductive pickup, use shielded signal and
bias cables.
General Handling
Handle the chip on the edges only using a vacuum collet or with
a sharp pair of bent tweezers. Because the surface of the chip
has fragile air bridges, never touch the surface of the chip with a
vacuum collet, tweezers, or fingers.
MOUNTING
The chip is back metallized and can be die mounted with gold/tin
(AuSn) eutectic preforms or with electrically conductive epoxy.
The mounting surface must be clean and flat.
Eutectic Die Attach
It is best to use an 80% gold/20% tin preform with a work surface
temperature of 255°C and a tool temperature of 265°C. When
hot 90% nitrogen/10% hydrogen gas is applied, maintain tool tip
temperature at 290°C. Do not expose the chip to a temperature
greater than 320°C for more than 20 sec. No more than 3 sec of
scrubbing is required for attachment.
Epoxy Die Attach
ABLEBOND 84-1LMIT is recommended for die attachment.
Apply a minimum amount of epoxy to the mounting surface so
that a thin epoxy fillet is observed around the perimeter of the
chip after placing it into position. Cure the epoxy per the
schedule provided by the manufacturer.
WIRE BONDING
RF bonds made with 0.003 in. × 0.0005 in. gold ribbon are recom-
mended for the RF ports. These bonds must be thermosonically
bonded with a force of 40 g to 60 g. DC bonds of 0.001 in.
(0.025 mm) diameter, thermosonically bonded, are recommended.
Create ball bonds with a force of 40 g to 50 g and wedge bonds
with a force of 18 g to 22 g. Create all bonds with a nominal
stage temperature of 150°C. Apply a minimum amount of
ultrasonic energy to achieve reliable bonds. Keep all bonds as
short as possible, less than 12 mil (0.31 mm).

HMC8121-SX

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier E-band 81-86 GHz VGA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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