LTC2875
5
2875f
For more information www.linear.com/LTC2875
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to device ground unless
otherwise specified.
Note 3: Not tested in production.
sWiTching characTerisTics
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
CC
= 3.3V or 5V, Figure 1 applies with R
L
= 60Ω, C
L
= 100pF, RSL =
0Ω, RS = 0V, TYP values at V
CC
= 5V unless otherwise noted. (Note 2)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Transceiver Timing
f
MAX
Maximum Data Rate
l
4 Mbps
t
PTXBD
TXD to Bus Dominant Propagation Delay (Figures 2, 3) V
CC
= 3.3V
l
45 80 130 ns
V
CC
= 5V
l
45 75 115 ns
t
PTXBR
TXD to Bus Recessive Propagation Delay (Figures 2, 3) V
CC
= 3.3V
l
80 120 170 ns
V
CC
= 5V
l
60 90 120 ns
t
PTXBDS
TXD to Bus Dominant Propagation Delay,
Slow S
lew
RSL=200kΩ
(Figures 2, 3)
V
CC
= 3.3V
l
200 540 1220 ns
V
CC
= 5V
l
220 560 1200 ns
t
PTXBRS
TXD to Bus Recessive Propagation Delay,
Slow S
lew
RSL=200kΩ
(Figures 2, 3)
V
CC
= 3.3V
l
400 960 2010 ns
V
CC
= 5V
l
480 1040 2240 ns
t
PBDRX
Bus Dominant to RXD Propagation Delay (Figures 2, 3)
l
25 40 65 ns
t
PBRRX
Bus Recessive to RXD Propagation Delay (Figures 2, 3)
l
25 45 80 ns
t
PTXRXD
TXD to RXD Dominant Propagation Delay (Figures 2, 3) V
CC
= 3.3V
l
80 120 180 ns
V
CC
= 5V
l
75 115 165 ns
t
PTXRXR
TXD to RXD Recessive Propagation Delay (Figures 2, 3) V
CC
= 3.3V
l
115 165 215 ns
V
CC
= 5V
l
95 135 185 ns
t
PTXRXDS
TXD to RXD Dominant Propagation Delay,
Slow Slew
RSL = 200kΩ
(Figures 2, 3)
V
CC
= 3.3V
l
190 500 1110 ns
V
CC
= 5V
l
210 530 1090 ns
t
PTXRXRS
TXD to RXD Recessive Propagation Delay,
Slow Slew
RSL = 200kΩ
(Figures 2, 3)
V
CC
= 3.3V
l
420 940 1910 ns
V
CC
= 5V
l
480 1020 2110 ns
t
TOTXD
TXD Timeout Time (Figures 2, 4)
l
0.5 2 4 ms
t
ENRX
RXD Enable from Shutdown (Figure 5)
l
40 µs
t
ENTX
TXD Enable from Shutdown (Figures 2, 6) (Note 5)
l
40 µs
t
SHDNRX
Time to Shutdown, RXD (Figure 5)
l
250 ns
t
SHDNTX
Time to Shutdown, TXD (Figures 2, 6)
l
250 ns
Transmitter Drive Symmetry (Common Mode Voltage Fluctuation)
V
SYM
Driver Symmetry (CANH + CANL – 2V
O(R)
)
(Dynamic Peak Measurement)
RL = 60Ω/Tol. < 1%, C
SPLIT
=
4.7nF/5%, fTXD = 250kHz, Input
Impedance of Oscilloscope: ≤ 20pF/
≥ 1MΩ (Figure 2)
l
±500 mV
Note 4: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature exceeds 150°C when overtemperature protection is active.
Continuous operation above the specified maximum operating temperature
may result in device degradation or failure.
Note 5: TXD must make a high to low transition after this time to assert a
bus dominant state.
Note 6: Pin capacitance given for reference only and is not tested in
production.
