NB3H73113G
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7
Output Enable/Disable
Output Enable pins (OE[2:0]) are LVCMOS/LVTTL
input pins that individually enable or disable the outputs
CLK[2:0] respectively. These inputs only disable the output
buffers thus not affecting the rest of the blocks on the device.
When using a differential output, only the OE1 pin must be
used to enable/disable the differential output (the OE0 pin
will be ignored). The hardware OE pins have an effect only
when the respective outputs are enabled in the configuration
space. The output disable state can be set to high impedance
(Hi−Z) or Low.
Power Down
Power saving mode can be activated though the power
down PD# input pin. This input is an LVCMOS/LVTTL
active Low Master Reset that disables the device and sets the
outputs Low. By default it has an internal pull−down resistor.
The device functions are disabled by default and when the
PD# pin is pulled high the device functions are activated.
Default Device State
The NB3H73113G parts shipped from
ON Semiconductor are blank, with no inputs/outputs
programmed. The parts need to be programmed by the field
sales or by a distributor or by the users themselves before
they can be used. Programmable clock software
downloadable from the ON Semiconductor website can be
used along with the programming kit to achieve this
purpose. For mass production, parts can be factory
programmed with a customer qualified configuration and
sourced from ON Semiconductor as a dash part number (Eg.
NB3H73113G−01).
Table 6. ATTRIBUTES
Characteristic Value
ESD Protection − Human Body Model 2 kV
Internal Input Default State Pull Up/Down Resistor
50 kW
Moisture Sensitivity, Indefinite Time Out of Dry Pack
(Note 1)
MSL1
Flammability Rating − Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125in
Transistor Count 130k
Meets or Exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
ABSOLUTE MAXIMUM RATINGS (Note 2)
Symbol
Parameter Rating Unit
VDD Positive Power Supply with Respect to Ground −0.5 to +4.6 V
V
I
Input Voltage with Respect to Chip Ground −0.5 to VDD + 0.5 V
T
A
Operating Ambient Temperature Range (Industrial Grade) −40 to +85 °C
T
STG
Storage Temperature −65 to +150 °C
T
SOL
Max. Soldering Temperature (10 sec) 265 °C
q
JA
Thermal Resistance (Junction−to−Ambient) (Note 3)
0 lfpm
500 lfpm
32.3
24.22
°C/W
°C/W
q
JC
Thermal Resistance (Junction−to−Case) 3.6 °C/W
T
J
Junction Temperature 125 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously.
If stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power). JESD51.7 type board. Back side Copper heat spreader area 100 sqmm, 2 oz
(0.070mm) copper thichness.
NB3H73113G
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8
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Condition Min Typ Max Unit
VDD Core Power Supply Voltage 3.3 V operation
2.5 V operation
2.97
2.25
3.3
2.5
3.63
2.75
V
VDDO[2:0] Output Power Supply Voltage (Note 4) 3.3 V operation
2.5 V operation
1.8 V operation
2.97
2.25
1.7
3.3
2.5
1.8
3.63
2.75
1.9
V
CL Clock output load capacitance for
LVCMOS / LVTTL clock
fout < 100 MHz
fout 100 MHz
15
5
pF
fclkin Crystal Input Frequency
Reference Clock Frequency
Fundamental Crystal
Single ended clock input
3
3
50
200
MHz
C
X
Xin / Xout pin stray capacitance (Note 5) 4.5 pF
C
XL
Crystal load capacitance (Note 6) 10 pF
ESR Crystal ESR 150
W
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
4. The output power supply voltage VDDO[2:0] must always be less than or equal to core power supply voltage VDD.
5. The Xin/ Xout pin stray capacitance needs to be subtracted from crystal load capacitance (along with PCB and trace capacitance) while
selecting appropriate load for the crystal in order to get minimum ppm error.
6. Refer to XTAL parameters supplied by the vendor.
DC ELECTRICAL CHARACTERISTICS
(V
DD
= 3.3 V ±10%, 2.5 V ±10%, VDDO[2:0] = 3.3 V ± 10%, 2.5 V ± 10%, 1.8 V ± 0.1V; GND = 0 V, T
A
= −40°C to 85°C, Note 7)
Symbol
Parameter Condition Min Typ Max Unit
I
DD_3.3
V
Power Supply Current for
Core
Configuration Dependent. VDD = 3.3 V,
T
A
= 25°C, XIN/CLKIN = 25 MHz
(XTAL), CLK[0:2] = 100 MHz, 16 mA
output drive
13 mA
I
DD_2.5
V
Power Supply Current for
Core
Configuration Dependent. VDD = 2.5 V,
T
A
= 25°C, XIN/CLKIN = 25 MHz
(XTAL), CLK[0:2] = 100 MHz, 12 mA
output drive
13 mA
I
PD
Power Down Supply Current PD# is Low to Make All Outputs OFF,
other control pins in default state
20
mA
V
IH
Input HIGH Voltage
Pins XIN, SCLK, OE[2:0] 0.65 V
DD
V
DD
V
Pin PD# 0.85 V
DD
V
DD
V
IL
Input LOW Voltage
Pins XIN, SCLK, OE[2:0] 0 0.35 V
DD
V
Pin PD# 0 0.15 V
DD
Zo Nominal Output Impedance Configuration Dependent. 12 mA Drive 22
W
R
PUP/PD
Internal Pull Up/ Pull Down
Resistor
VDD = 3.3 V
VDD = 2.5 V
50
80
kW
Cprog
Programmable Internal
Crystal Load Capacitance
Configuration Dependent 4.36 20.39
pF
Programmable Internal
Crystal Load Capacitance
Resolution
0.05
Cin Input Capacitance Pins PD#, SCLK, OE[2:0] 4 6 pF
NB3H73113G
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9
DC ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 3.3 V ±10%, 2.5 V ±10%, VDDO[2:0] = 3.3 V ± 10%, 2.5 V ± 10%, 1.8 V ± 0.1V; GND = 0 V, T
A
= −40°C to 85°C, Note 7)
Symbol UnitMaxTypMinConditionParameter
LVCMOS/LVTTL OUTPUTS
V
OH
Output HIGH Voltage
VDDO = 3.3 V I
OH
= 4 mA
I
OH
= 8 mA
I
OH
= 12 mA
I
OH
= 16 mA
VDDO = 2.5 V I
OH
= 2 mA
I
OH
= 4 mA
I
OH
= 8 mA
I
OH
= 12 mA
VDDO = 1.8 V I
OH
= 1 mA
I
OH
= 2 mA
I
OH
= 4 mA
I
OH
= 8 mA
0.75xVDDO V
V
OL
Output LOW Voltage
VDDO = 3.3 V I
OL
= 4 mA
I
OL
= 8 mA
I
OL
= 12 mA
I
OL
= 16 mA
VDDO = 2.5 V I
OL
= 2 mA
I
OL
= 4 mA
I
OL
= 8 mA
I
OL
= 12 mA
VDDO = 1.8 V I
OL
= 1 mA
I
OL
= 2 mA
I
OL
= 4 mA
I
OL
= 8 mA
0.25xVDDO V
I
DDO_LVCMOS
LVCMOS Output Supply
Current
Configuration Dependent. T
A
= 25°C,
CLK[0:2] = f
out
in PLL bypass mode
Measured on VDDO = 3.3 V
f
out
= 33.33 MHz, C
L
=5pF
f
out
= 100 MHz, C
L
=5pF
f
out
= 200 MHz, C
L
=5pF
Measured on VDDO = 2.5 V
f
out
= 33.33 MHz, C
L
=5pF
f
out
= 100 MHz, C
L
=5pF
f
out
= 200 MHz, C
L
=5pF
Measured on VDDO = 1.8 V
f
out
= 33.33 MHz, C
L
=5pF
f
out
= 100 MHz, C
L
=5pF
f
out
= 200 MHz, C
L
=5pF
6
16
32
4
12
24
3
8
16
mA

NB3H73113G00MNR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Clock Generators & Support Products PLL CLOCK GENERATOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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