This is information on a product in full production.
April 2015 DocID024624 Rev 4 1/16
16
STL105NS3LLH7
N-channel 30 V, 0.0033 Ω typ., 27 A STripFET™ H7
Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
Very low on-resistance
Very low Q
g
Avalanche high ruggedness
Embedded Schottky diode
Applications
Switching applications
Description
This device exhibits low on-state resistance and
capacitance for improved conduction and
switching performance.
PowerFLAT
5x6
1
2
3
4
AM15540v3
5
6
7
8
12 34
Top View
D(5, 6, 7, 8)
G(4)
S(1, 2, 3)
Order code V
DS
R
DS(on)
max I
D
STL105NS3LLH7 30 V 0.0039 Ω 27 A
Table 1. Device summary
Order code Marking Package Packaging
STL105NS3LLH7 105NS3LL PowerFLAT
TM
5x6 Tape and reel
www.st.com
Contents STL105NS3LLH7
2/16 DocID024624 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID024624 Rev 4 3/16
STL105NS3LLH7 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 30 V
V
GS
Gate-source voltage ± 20 V
I
D
(1)
1. This value is rated according to R
thj-c
Drain current (continuous) at T
C
= 25 °C 105 A
I
D
(1)
Drain current (continuous) at T
C
= 100 °C 65 A
I
DM
(1)(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 420 A
I
D
(3)
3. This value is rated according to R
thj-pcb
Drain current (continuous) at T
pcb
= 25 °C 27 A
I
D
(3)
Drain current (continuous) at T
pcb
= 100 °C 16 A
I
DM
(2)(3)
Drain current (pulsed) 108 A
P
TOT
(1)
Total dissipation at T
C
= 25 °C 62.5 W
P
TOT
(2)
Total dissipation at T
pcb
= 25 °C 4 W
T
stg
Storage temperature
-55 to 150 °C
T
j
Operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-pcb
(1)
1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec
Thermal resistance junction-pcb max 31.3 °C/W
R
thj-case
Thermal resistance junction-case max 2 °C/W

STL105NS3LLH7

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 30V 27A PWRFLAT56
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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