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STL105NS3LLH7
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
Electrical char
acteristics
STL105NS
3LLH7
4/16
DocID024624 Rev 4
2 Electrical
characteristics
(T
C
= 25 °C unless otherwise specifie
d)
T
able 4.
On /off st
ates
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1 m
A
, V
GS
= 0 V
30
V
I
DSS
Zero gate voltage
drain current
V
GS
= 0 V
V
DS
= 24 V
500
μ
A
I
GSS
Gate-body leakage
current
V
GS
= ±
20 V
, V
DS
= 0 V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 1 mA
1.2
V
R
DS(on)
S
tatic drain-source
on-resistance
V
GS
= 10 V
, I
D
= 13.5 A
0.0033
0.0039
Ω
V
GS
= 4.5 V
, I
D
= 13.5 A
0.0044
0.0055
Ω
T
able 5. Dynamic
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
C
iss
Input capacit
ance
V
DS
= 25 V
, f = 1 MHz,
V
GS
= 0 V
-2
1
1
0-
p
F
C
oss
Output capacit
ance
-
640
-
pF
C
rss
Reverse transfer
capacit
ance
-4
2-
p
F
Q
g
T
otal gate charge
V
DD
= 15 V
, I
D
= 27 A,
V
GS
= 4.5 V
(see
Figu
re 1
1
)
-
13.7
-
nC
Q
gs
Gate-source charge
-
7.5
-
nC
Q
gd
Gate-drain charge
-
3.3
-
nC
T
able 6. Switching times
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
t
d(on)
T
urn-on delay time
V
DD
= 15 V
, I
D
= 13.5 A,
R
G
= 4.7
Ω,
V
GS
= 4.5 V
-
26.4
-
ns
t
r
Rise time
-
10.4
-
ns
t
d(off)
T
urn-off delay time
-
31.8
-
ns
t
f
Fall time
-
12.5
-
ns
DocID024624 Rev 4
5/16
STL105NS3LLH7
Electrical
characteristic
s
T
able 7. S
ource drain diode
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
I
SD
Source-drain current
-
27
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
108
A
V
SD
(2)
2.
Pulsed: pulse duration = 300
μ
s, duty cycle 1.5%
Forward on voltage
I
SD
= 2 A, V
GS
= 0 V
-
0.4
0.7
V
t
rr
Reverse recovery time
I
D
= 2 A, di/dt = 100 A/
μ
s
V
DD
= 20 V
-
35.2
ns
Q
rr
Reverse recovery charge
-
26.4
nC
I
RRM
Reverse recovery current
-
1.5
A
Electrical char
acteristics
STL105NS
3LLH7
6/16
DocID024624 Rev 4
2.1
Electrical cha
racteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
Figure 4. Output characteris
tics
Figure 5. T
ransfer characterist
ics
Figure 6. Gate charge vs
gate-source volt
age
Figure 7. St
at
ic drain-s
ource on-resist
ance
I
D
10
1
0.1
0.1
1
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10ms
1s
100ms
0.01
Tj=150°C
Tpcb=25°C
Single pulse
100
AM17920v1
Single pulse
δ
=0.5
0.05
0.02
0.01
0.2
0.5
K
10
t
p
(s)
-4
10
-3
10
-2
10
-1
10
-5
10
-3
10
-2
pcb
10
-1
10
0
10
1
AM17927v1
I
D
100
60
20
0
V
DS
(V)
(A)
2V
4V
V
GS
=6, 7, 8, 9, 10V
40
80
120
3V
5V
140
160
180
0
1.5
3
4.5
AM17921v1
I
D
120
80
40
0
0
2
V
GS
(V)
4
(A)
1
3
5
20
60
100
140
V
DS
=3V
6
7
AM17922v1
V
GS
6
4
2
0
0
20
Q
g
(nC)
(V)
8
30
10
V
DD
=15V
I
D
=27A
12
10
AM17923v1
R
DS(on)
3.20
3.10
3.00
0
10
I
D
(A)
(m
Ω
)
5
15
3.30
V
GS
=10V
20
25
3.40
3.50
AM17924v1
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
STL105NS3LLH7
Mfr. #:
Buy STL105NS3LLH7
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 30V 27A PWRFLAT56
Lifecycle:
New from this manufacturer.
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