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PSMN3R0-60PS,127

P1-P3P4-P6P7-P9P10-P12P13-P15
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
[1] Continuous current is limited by package.
PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
Rev. 02 — 28 October 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
j
≥ 25 °C; T
j
≤ 175°C --60V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
[1]
--100A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --306W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 11
; see Figure 12
-2.43mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=80A; V
DS
=12V;
see Figure 13
; see Figure 14
-28-nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C;
I
D
=100A; V
sup
≤ 60 V;
R
GS
=50Ω; unclamped
--800mJ
PSMN3R0-60PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 2 of 14
NXP Semiconductors
PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
2. Pinning information
3. Ordering information
4. Limiting values
[1] Continuous current is limited by package.
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT78 (TO-220AB)
2 D drain
3Ssource
mb D mounting base; connected to
drain
12
mb
3
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
PSMN3R0-60PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 60 V
V
DGR
drain-gate voltage T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
=20kΩ -60V
V
GS
gate-source voltage -20 20 V
I
D
drain current V
GS
=10V; T
mb
= 100 °C; see Figure 1 - 83.4 A
V
GS
=10V; T
mb
=25°C; see Figure 1
[1]
- 100 A
I
DM
peak drain current pulsed; t
p
≤ 10 µs; T
mb
=25°C; see Figure 3 - 824 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - 306 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C
[1]
- 100 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 824 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
=100A;
V
sup
≤ 60 V; R
GS
=50Ω; unclamped
- 800 mJ
P1-P3P4-P6P7-P9P10-P12P13-P15

PSMN3R0-60PS,127

Mfr. #:
Buy PSMN3R0-60PS,127
Manufacturer:
Nexperia
Description:
MOSFET N-ch 60V 3.0 mOhm MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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